Crystalline silicon efficient photovoltaic cell structure
A photovoltaic battery, high-efficiency technology, applied in the direction of photovoltaic power generation, circuits, electrical components, etc., can solve the problems affecting the current output capacity of the battery, and achieve the effect of reducing the cost of electricity, reducing electrical losses, and reducing ohmic impedance
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Embodiment 1
[0031] A crystalline silicon high-efficiency photovoltaic cell structure, with reference to figure 1 , including a silicon substrate 1, the upper surface (light-receiving surface) of the silicon substrate 1 includes a tunneling dielectric layer 2, a functional layer 3, an optical layer 4, and an electrode (Ag) 5 from bottom to top; the functional layer 3 is a high light-transmitting rate of the semiconductor layer.
[0032] Wherein, the resistivity of the functional layer 3 is one order of magnitude lower than that of the silicon substrate, the thickness of the functional layer is 5nm, and the functional layer is a ZnO layer.
[0033] Wherein, the tunneling dielectric layer 2 is an insulating layer, and the tunneling dielectric layer 2 is SiO 2 Layer, the thickness of the tunnel dielectric layer 2 is 0.8nm.
[0034] Among them, the thickness of the optical layer 4 is 60nm, the average refractive index is 1.8, and the light transmittance is not less than 80%. Layer 4 is a Si...
Embodiment 2
[0037] A crystalline silicon high-efficiency photovoltaic cell structure, with reference to figure 2 , including a silicon substrate 1, the upper surface (light-receiving surface) of the silicon substrate 1 includes a tunneling dielectric layer 2, a functional layer 3, an optical layer 4, and an electrode (Ag) 5 from bottom to top; the functional layer 3 is a high light-transmitting rate of the semiconductor layer.
[0038] Wherein, the resistivity of functional layer 3 is 6 orders of magnitude lower than the resistivity of silicon substrate, and the thickness of described functional layer is 200nm, and functional layer is TiO 2 Floor.
[0039] Wherein, the tunneling dielectric layer 2 is an insulating layer, and the tunneling dielectric layer 2 is Al 2 o 3 Layer, the thickness of the tunnel dielectric layer 2 is 2nm.
[0040] Among them, the thickness of the optical layer 4 is 110nm, the average refractive index is 2.3, and the light transmittance is not less than 80%. ...
Embodiment 3
[0043] A crystalline silicon high-efficiency photovoltaic cell structure, with reference to image 3 , including a silicon substrate 1, the upper surface (light-receiving surface) of the silicon substrate 1 includes an intrinsic silicon layer 6, a functional layer 3, an optical layer 4, and an electrode (Ag) 5 from bottom to top; the functional layer 3 is a high light-transmitting rate of the semiconductor layer.
[0044] Wherein, the resistivity of the functional layer 3 is 2 orders of magnitude lower than that of the silicon substrate, the thickness of the functional layer 3 is 10 nm, and the functional layer is a NiO layer.
[0045] Wherein, the intrinsic silicon layer 6 is amorphous, and the thickness of the intrinsic silicon layer 6 is 5 nm.
[0046] Wherein, the thickness of the optical layer 4 is 70 nm, the average refractive index is 1.9, and the light transmittance is higher than 90%. The optical layer 4 is an insulating layer, and the electrode 5 is in physical con...
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Abstract
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