Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lattice gradient buffer layer applied to lattice mismatch solar cell epitaxial growth

A solar cell and gradient buffer layer technology, applied in the field of solar photovoltaic power generation, can solve the problems of poor anti-radiation performance, difficult recovery, and large As atomic radius, so as to improve battery performance and stability, improve stability, reduce Effect of Effective Thickness

Pending Publication Date: 2019-11-22
ZHONGSHAN DEHUA CHIP TECH CO LTD
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The results of a large number of irradiation experiments show that the radiation resistance of GaInAs sub-cells is much worse than that of GaInP sub-cells. Some analysts believe that the reason is that the atomic radius of As is larger, and its position is not easy to recover after high-energy particles are irradiated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lattice gradient buffer layer applied to lattice mismatch solar cell epitaxial growth
  • Lattice gradient buffer layer applied to lattice mismatch solar cell epitaxial growth
  • Lattice gradient buffer layer applied to lattice mismatch solar cell epitaxial growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to further illustrate the content of the present invention, the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0030] Such as figure 1 and figure 2 As shown, the lattice-mismatched triple-junction solar cell provided in this embodiment includes a Ge substrate 1, and the Ge substrate 1 is a p-type Ge single wafer with a single-side polished 004 orientation; 1 GaInP nucleation layer 2, GaInAs buffer layer 3, first tunnel junction 4, lattice gradient buffer layer 5 (also called lattice gradient wide-spectrum reflector) are grown sequentially from bottom to top on the polished surface ), a GaInAs sub-cell 6, a second tunnel junction 7, and a GaInP sub-cell 8; wherein, the lattice gradient buffer layer 5 is formed by stacking two sets of composite DBRs 51 and 52 with different reflection bands, the two The set of composite DBRs 51 and 52 is composed of multiple pairs of stacked DBRs, and t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a lattice gradient buffer layer applied to lattice mismatch solar cell epitaxial growth. The lattice gradient buffer layer is located between a lattice mismatch epitaxial material of a lattice mismatch solar cell and a substrate (or an epitaxial layer with the same lattice constant as the substrate). The lattice gradient buffer layer is formed by stacking a plurality of sets of composite DBRs with different reflection wave bands, wherein each set of composite DBR is composed of a plurality of DBR pairs stacked together, lattice constants between adjacent DBR pairs are in gradient change, each DBR pair comprises two semiconductor material layers, and the two semiconductor material layers are different in refractive index but identical in lattice constant or mismatchcapable of achieving strain compensation exists. According to the invention, the composite DBRs with wide-spectrum reflection are organically fused into the lattice gradient buffer layer, so that thedensity of defects such as a large number of dislocations introduced by growth of a lattice mismatch epitaxial material can be greatly reduced, the effect of a reflector can be fully exerted, the process steps, the growth duration and the raw material loss are reduced, and the cost is reduced.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaic power generation, in particular to a lattice gradient buffer layer applied to the epitaxial growth of lattice-mismatched solar cells. Background technique [0002] With the development of modern industrial technology, energy has become the most important material basis for determining social progress in the survival and development of human society. With the development of society, coal, oil, natural gas, etc. pollute the environment seriously and non-renewable energy sources are gradually decreasing. , so the development of green new energy is imminent. Solar energy is inexhaustible and inexhaustible clean energy, so the research and development of solar cell technology will alleviate the future energy shortage to a certain extent. From the perspective of the development of photovoltaic power generation technology, solar cells can be roughly divided into three categories: the first ge...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/0352H01L31/041H01L31/0687H01L31/0693
CPCH01L31/03046H01L31/035272H01L31/041H01L31/0687H01L31/0693Y02E10/544
Inventor 刘建庆高熙隆文宏刘雪珍刘恒昌
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products