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Photoelectrocatalytic metal-supported boron-doped diamond, and preparation method and application thereof

A metal-loaded, photoelectric catalysis technology, used in the field of boron-doped diamond and its preparation, can solve the problems of weak catalytic ability and poor stability of electrode materials, and achieve the effects of improving selectivity and efficiency, large specific surface area and low resistivity

Active Publication Date: 2019-11-26
SHENZHEN INST OF ADVANCED TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a photocatalytic metal-loaded boron-doped diamond and its preparation method and application, aiming to solve the problems of poor stability and weak catalytic ability of electrode materials used in photocatalytic reactions in the prior art

Method used

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  • Photoelectrocatalytic metal-supported boron-doped diamond, and preparation method and application thereof
  • Photoelectrocatalytic metal-supported boron-doped diamond, and preparation method and application thereof
  • Photoelectrocatalytic metal-supported boron-doped diamond, and preparation method and application thereof

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preparation example Construction

[0033] The embodiment of the present invention provides a method for preparing a photoelectrocatalytic metal-loaded boron-doped diamond, comprising the following steps:

[0034] S01. Provide boron-doped diamond as a carrier, the boron-doped diamond includes a substrate, and a boron-doped diamond layer arranged on any side of the substrate;

[0035] S02. Perform etching treatment on the surface of the boron-doped diamond layer on any side of the substrate to obtain a processed boron-doped diamond layer, which includes a flat bottom layer and a layer perpendicular to the Flatten the bottom layer of the tapered structure;

[0036] S03. Provide a metal target, and perform metal sputtering treatment on the surface of the boron-doped diamond carrier by means of magnetron sputtering to obtain the photoelectrocatalytic boron-doped diamond loaded with metal.

[0037] Specifically, in step S01 , a substrate is provided. Preferably, the material of the substrate is selected from any mat...

Embodiment 1

[0063] The preparation method of boron-doped diamond loaded with gold by photocatalysis is as follows:

[0064] Step 1: providing a boron-doped diamond carrier, the boron-doped diamond carrier includes a substrate, and a boron-doped diamond layer disposed on either side of the substrate;

[0065] First, provide a substrate of chromium sheet material, and pretreat the substrate: put the substrate in a beaker, add 100mL of hydrogen peroxide solution and 10mL of concentrated sulfuric acid, and sonicate for 30min; wash it with water after sonication, and then add 50mL of acetone, ultrasonic for 10min; then replace the acetone with ethanol, ultrasonic for 10min, remove impurities on the surface of the chromium substrate through two ultrasonic steps, and at the same time form certain defects on the surface, forming crystal planting sites. Then take out the chromium sheet and place it in deionized water for ultrasonic cleaning for 10 min. Finally, the cleaned substrate is placed in ...

Embodiment 2

[0071] The photocatalytic gold-loaded boron-doped diamond prepared in Example 1 is used as an electrode to carry out the photoelectrocatalytic nitrogen reduction reaction as follows: Figure 4 ,Specific steps are as follows:

[0072] A closed double-cell reactor is used, and the working electrode chamber and the counter electrode chamber are separated by glass sheets, so that electrons can pass through, but the solution is prevented from mixing. The prepared diamond film electrode was used as the working electrode, the Pt sheet electrode was used as the counter electrode, and the distance between the working electrode and the counter electrode was 2 cm. Add deionized aqueous solution to the working electrode compartment, and add an equal volume of 0.1M KI solution to the counter electrode compartment. Before starting the reaction, pre-flow N in the working electrode chamber for 0.5 h 2 , and then continue to feed N 2 . The working electrode was irradiated with Hg / Xe arc li...

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Abstract

The invention provides a photoelectrocatalytic metal-supported boron-doped diamond. The metal-supported boron-doped diamond comprises a substrate and a boron-doped diamond layer arranged on any side of the substrate, and the boron-doped diamond layer comprises a flat bottom layer, a conical structure layer perpendicular to the flat bottom layer, and a metal nanoparticle catalyst uniformly loaded at the tip of the conical structure layer. The photoelectrocatalytic metal-supported boron-doped diamond has the advantages of high catalytic activity, high stability, high selectivity in a chemical process, and great increase of the selectivity and efficiency of the catalytic process.

Description

technical field [0001] The invention relates to the field of photoelectrochemical catalytic electrodes, in particular to photocatalytic boron-doped diamond loaded with metal, a preparation method and application. Background technique [0002] With the continuous increase of the global population, the depletion of fossil fuels and the increasingly serious global environmental problems, it is imminent to explore new fuels that can replace traditional fossil fuels and reduce environmental burdens while achieving sustainable energy utilization. Ammonia is mainly used in the production of chemical fertilizers in chemical processes, which plays an important role in solving the global food problem. At the same time, it is also a green energy carrier and a potential energy transmission fuel. [0003] The main role of nitrogen reduction to produce ammonia is in chemical production. Synthetic ammonia is of great significance to the growth of crops and to solving the global food proble...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/52B01J35/10C25B1/00C25B11/06C23C14/18C23C14/35
CPCB01J23/52C23C14/185C23C14/35C25B1/55C25B11/091B01J35/33B01J35/60B01J35/39Y02P20/133
Inventor 杨扬唐永炳胡渊徐梦琦张文军
Owner SHENZHEN INST OF ADVANCED TECH
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