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Preparation method of low on resistance high voltage resistant diamond power diode

A low on-resistance, power diode technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as insufficient activation of dopants, achieve low on-resistance, achieve balance, and improve off-state performance effect

Inactive Publication Date: 2019-11-26
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Another alternative dopant is the phosphorus atom which forms a very deep donor level (approximately Ec-0.57eV) resulting in insufficient activation of the dopant at room temperature
Although CVD diamond with n-type conductivity has recently been achieved by phosphorus doping, it has not yet been achieved by ion implantation.
Therefore, forming high-quality, low-defect-density n-type doped regions is one of the scientific challenges to realize the electric field regulation of power diodes.

Method used

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  • Preparation method of low on resistance high voltage resistant diamond power diode
  • Preparation method of low on resistance high voltage resistant diamond power diode
  • Preparation method of low on resistance high voltage resistant diamond power diode

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Experimental program
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Embodiment 1

[0038] Such as Figures 1 to 7 As shown, a diamond power diode with low on-resistance and high withstand voltage, its structure includes substrate 1, transition layer 2, drift layer, groove, n-type oxide 6, ohmic contact electrode 7, Xiao Tertyl contact electrode 8; Its preparation method comprises the following steps:

[0039] S1. growing a p-type transition layer 2 on a low-resistance p-type diamond substrate 1;

[0040] S2. growing an unintentionally doped diamond drift layer 3 on the p-type transition layer 2;

[0041] S3. forming a pattern 4 on the surface of the drift layer 3 by using a photoresist;

[0042] S4. Forming the groove structure 5 by etching with oxygen plasma;

[0043] S5. Deposit and form n-type oxide 6 in the groove structure 5 and remove the photoresist;

[0044] S6. Forming an ohmic contact electrode 7 on the back side of the substrate 1;

[0045] S7. Deposit and form a Schottky metal contact electrode 8 on the n-type oxide 6 and the diamond drift l...

Embodiment 2

[0052] Such as Figure 8 As shown, it is a schematic diagram of the device structure of this embodiment, which differs from the structure of Embodiment 1 only in that in Embodiment 1 it is a composite structure of n-type oxide 6 and p-type semiconductor, while in Embodiment 3 it is a p-type oxide 6 Composite structure with n-type semiconductor.

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Abstract

The invention relates to the technical field of semiconductor power devices, and more particularly relates to a preparation method of a low on resistance high voltage resistant diamond power diode. The preparation method comprises the following steps of S1, growing a p-type transition layer on a low resistance p-type diamond substrate; S2, growing an undesignedly doped diamond drift layer on the p-type transition layer; S3, forming a pattern on the surface of the drift layer by using photoresist; S4, etching to form groove structures by using oxygen plasma; S5, depositing in the groove structures to form n-type oxide and removing the photoresist; S6, forming an ohmic contact electrode on the back of the substrate; and S7, depositing on the n-type oxide and the diamond drift layer to form aSchottky metal contact electrode. According to the preparation method, the structure of the overlapped drift layers is used, so that the balance between on resistance and voltage endurance capabilitycan be achieved; and the n-type oxide is combined to control a junction interface electric field, so that a high breakdown voltage is acquired.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a method for preparing a diamond power diode with low on-resistance and high withstand voltage. Background technique [0002] Diamond power devices include diodes and transistors, which are mainly divided into two technical routes: horizontal conduction and vertical conduction. Vertical conduction type devices can increase the withstand voltage by changing the thickness of the drift layer while keeping the device size constant, and alleviate the premature breakdown caused by the crowding effect of the gate edge electric field in the lateral device. The electric field peak position of the vertical device is far away from the device surface, which can effectively suppress the trap state and reduce the dynamic on-resistance. Current flow out in the longitudinal direction can withstand higher power densities compared to lateral devices. The electric field distri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/861H01L29/06H01L21/329
CPCH01L29/0615H01L29/6603H01L29/8613H01L29/872
Inventor 李柳暗
Owner SUN YAT SEN UNIV