Single crystal silicon refining production process and refining device thereof

Abstract

The invention belongs to the technical field of single crystal silicon refining, and particularly relates to a single crystal silicon refining production process and a refining device thereof. The refining device comprises a base; a furnace body is fixedly installed at the middle of the top of the base, and four guide pillars are fixed to the sides of the base. A lifting plate is movably fitted inthe middle portions of the four guide columns. A furnace cover is fixedly fastened to the middle of the lifting plate. The top of the furnace cover is vertically connected with a stretching tube. Theinner wall of the stretching tube is fitted with a graphite piston. The bottom end is vertically connected with a seed rod, and the top end of the graphite piston is vertically fixedly connected witha ball screw. In the invention, the servo motor is driven to rotate the screw nut through the gearbox, and then the ball screw and the graphite piston are screwed down to move along the stretching tune, so that the seed rod can contact the silicon melt, and the rotation speed can be accurately controlled. The necking growth process, the shoulder growth process, the isometric growth process and the tail growth process can be well ensured, and the formation speed of the single crystal silicon rod can be precisely controlled.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon refining, in particular to a single crystal silicon refining production process and a refining device thereof. Background technique [0002] Single crystal silicon is a single crystal of silicon with a basically complete lattice structure. Different directions have different properties. It is a good semiconducting material with a purity requirement of more than 99.9999%. Single crystal silicon has a diamond lattice. The crystal is hard and brittle, has a metallic luster, and can conduct electricity, but its conductivity is lower than that of metals and increases with temperature. It has semiconductor properties. Single crystal silicon is an important semiconductor material. Doping a small amount of group IIIA elements into single crystal silicon forms a P-type semiconductor, and doping a small amount of group VA elements forms an N-type semiconductor. The combination of N-type and P...

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Problems solved by technology

[0007] Aiming at the deficiencies of the prior art, the present invention provides a single crystal silicon refining production process and its refining device, which solves the problems of the current single crystal silicon refining production process and its refining device in the necking growth process, shoulder growth process, etc. Neither the radial growth process nor the tail growth process can achieve precise control, and after the monocrystalline silicon ingot is produced, it needs to be quickly transferred to the holding furnace for slow cooling, which will damage the newly formed monocrystalline silicon ingot with insufficient crystallization strength The problem

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