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Processing method of thin plate-shaped sapphire wafer

A sapphire wafer and plate-shaped technology, applied in metal processing equipment, manufacturing tools, grinding devices, etc., can solve problems such as poor surface shape, achieve fast processing efficiency, reduce costs, and improve utilization rates

Active Publication Date: 2019-12-06
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the guided mold method is based on the principle of the capillary action of the narrow gap of the mold on the melt, the traction of the capillary action and the extrusion of the mold will cause a large waviness on the surface of the molded wafer, and the surface has a hilly undulating appearance. Poor type

Method used

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  • Processing method of thin plate-shaped sapphire wafer
  • Processing method of thin plate-shaped sapphire wafer

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Such as figure 2 Shown, a kind of processing method of thin plate-shaped sapphire wafer has the following steps:

[0067] S1, double-sided free abrasive grinding:

[0068] First, fully mix W20 diamond micropowder and deionized water at a mass ratio of 1:15 to 1:20, and stir continuously with a magnetic stirrer to maintain a suspension state to obtain a grinding liquid; the material of the upper grinding disc and the lower grinding disc is HT250 gray cast iron. The thin plate-shaped sapphire wafer is placed in the planetary wheel groove of the constant pressure double-sided grinding machine, and the grinding liquid is continuously injected by the peristaltic pump and the internal flow channel of the grinding machine. The upper and lower surfaces of the plate-shaped sapphire wafer; the rotation speed of the upper grinding disc is 15r / min, the rotation speed of the lower grinding disc is 30r / min, the grinding pressure is 0.05MPa, the flow rate of the grinding liquid is ...

Embodiment 2

[0077] Such as image 3 Shown, a kind of processing method of thin plate-shaped sapphire wafer has the following steps:

[0078] S1, double-sided free abrasive grinding.

[0079]First, fully mix W20 SiC micropowder and deionized water at a mass ratio of 1:15 to 1:20, and stir continuously with a magnetic stirrer to maintain a suspension state to obtain a grinding liquid; the material of the upper grinding disc and the lower grinding disc is HT200 gray Cast iron; thin plate-shaped sapphire wafers are placed in the star wheel groove of the constant pressure double-sided grinding machine, and the grinding liquid is continuously injected by the peristaltic pump and the internal flow channel of the grinding machine. Flow to the upper and lower surfaces of the thin plate-shaped sapphire wafer; the speed of the upper grinding disc is 10r / min, the rotational speed of the lower grinding disc is 25r / min, the grinding pressure is 0.03MPa, the flow rate of the grinding liquid is controll...

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Abstract

The invention discloses a processing method of a thin plate-shaped sapphire wafer. The processing method is characterized by comprising the following steps that a thin plate-shaped sapphire wafer is sequentially subjected to double-sided free abrasive grinding, double-sided consolidation hard abrasive grinding disc coarse grinding, double-sided consolidation hard abrasive grinding disc fine grinding and double-sided consolidation soft abrasive grinding disc mechanical polishing treatment. The double-sided grinding of the free abrasive is mainly used for reducing the ripple degree of the thin plate-shaped sapphire wafer and controlling the flatness. The grinding pressure can be increased by the double-sided consolidation abrasive grinding disc grinding, the material removal rate is improved, the processing precision and the surface quality controllability are high, and the processing efficiency is high. The double-sided consolidation soft abrasive grinding disc mechanical polishing treatment can greatly improve the grinding and polishing efficiency of the wafer, avoids a large amount of loss of the traditional silica sol polishing solution, reduces the cost, and is green and environment-friendly. According to the processing method, the thin plate-shaped sapphire wafer can be processed and manufactured with high precision, high quality and high efficiency.

Description

technical field [0001] The invention belongs to the technical field of sapphire ultra-precision processing, and mainly relates to a processing method of a thin plate-shaped sapphire wafer. Background technique [0002] Sapphire is a kind of (α-Al 2 o 3 ) alumina crystal, commonly known as corundum, its lattice structure is hexagonal lattice structure. Single crystal sapphire has excellent optical properties and chemical stability, high strength, high hardness, good impact resistance and wear resistance, and is widely used in infrared optical materials, high-intensity laser window materials, high-temperature superconducting thin film wafers and LEDs Substrate material, etc. Compared with other types of crystal materials, single crystal sapphire has slow growth rate, low processing efficiency and high cost, which severely limit the application of sapphire wafers. [0003] Such as figure 1 As shown, the traditional thin plate sapphire wafer is cut to size by diamond multi-...

Claims

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Application Information

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IPC IPC(8): B24B1/00B24B37/08
CPCB24B1/00B24B37/08
Inventor 康仁科高尚李洪钢董志刚朱祥龙牟宇
Owner DALIAN UNIV OF TECH
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