Composition for wet etching to silicon nitride

Abstract

The present invention relates to a composition for etching a silicon nitride layer, wherein the silicon nitride layer is composed of inorganic acid, a silicon-based compound and water, does not contain fluorine, and can selectively remove the silicon nitride layer while minimizing damage to an underlying metal layer and an etching rate of a silicon oxide layer.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2018-0062247, the disclosure of which is incorporated herein by reference. technical field [0003] The present invention relates to an etchant composition for silicon nitride films, and more particularly, to an etchant composition having high selectivity for silicon nitride films. The etchant composition is used for etching away a silicon nitride film in a semiconductor process, and selectively has a higher etching rate for a silicon nitride film than a silicon oxide film in a high-temperature etching process. Background technique [0004] A semiconductor manufacturing process requires a stacked structure formation technology capable of continuously increasing integration density by introducing a three-dimensional structure. In the semiconductor manufacturing process, a silicon oxide film (SiO 2 ) and silicon nitride films (SiNx) are stacked indi...

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Problems solved by technology

However, there is a problem that the additive increases the silicon concentration in the composition, and the silicon oxide film re-grows within the processing time

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