Composition for wet etching to silicon nitride

一种组合物、化合物的技术，应用在表面浸蚀组合物、化学仪器和方法、电气元件等方向，能够解决增加硅浓度等问题，达到氮化硅膜去除的问题改善、广泛应用、高蚀刻选择性的效果

Active Publication Date: 2019-12-10
LTCAM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a problem that the additive increases the silicon concentration in the composition, and the silicon oxide film re-grows within the processing time

Method used

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  • Composition for wet etching to silicon nitride
  • Composition for wet etching to silicon nitride

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Embodiment Construction

[0031] Embodiments of the present invention relate to an etchant composition that includes phosphoric acid, a silicon-based compound, and water, but does not contain fluorine. The etchant composition is capable of selectively etching a silicon nitride film while suppressing damage to an underlying metal film and the like and etching of a silicon oxide film.

[0032] More specifically, this embodiment relates to a selective silicon nitride film etchant composition capable of selectively wet etching silicon nitride during the fabrication of semiconductors, dynamic random access memory (DRAM) and NAND flash memory A film wherein the composition has at least 200 times higher etch selectivity.

[0033] Hereinafter, specific embodiments of the present invention will be described. However, this is just an example, but the present invention is not limited thereto.

[0034] The inorganic acid is any one selected from sulfuric acid, nitric acid, phosphoric acid and mixtures thereof. ...

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Abstract

The present invention relates to a composition for etching a silicon nitride layer, wherein the silicon nitride layer is composed of inorganic acid, a silicon-based compound and water, does not contain fluorine, and can selectively remove the silicon nitride layer while minimizing damage to an underlying metal layer and an etching rate of a silicon oxide layer.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2018-0062247, the disclosure of which is incorporated herein by reference. technical field [0003] The present invention relates to an etchant composition for silicon nitride films, and more particularly, to an etchant composition having high selectivity for silicon nitride films. The etchant composition is used for etching away a silicon nitride film in a semiconductor process, and selectively has a higher etching rate for a silicon nitride film than a silicon oxide film in a high-temperature etching process. Background technique [0004] A semiconductor manufacturing process requires a stacked structure formation technology capable of continuously increasing integration density by introducing a three-dimensional structure. In the semiconductor manufacturing process, a silicon oxide film (SiO 2 ) and silicon nitride films (SiNx) are stacked indi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/06
CPCC09K13/06H01L21/31111C09K13/04H01L21/0217
Inventor 李锡浩宋定桓全成植赵诚一金炳卓林娥铉李浚宇
Owner LTCAM
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