Large-area zirconium disulfide film and atomic layer deposition preparation method thereof

A technology of atomic layer deposition and zirconium disulfide, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of residual impurity defects, low production efficiency, small size, etc., and achieve accurate thickness at the atomic level Controllable, low reaction temperature effect

Inactive Publication Date: 2019-12-10
ANYANG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current preparation of atomically thick ZrS 2 The methods are mainly limited to mechanical stripping method, liquid phase stripping method and chemical vapor deposition method, etc.
There are still many problems in these methods, such as: poor compatibility with subsequent device preparation processes, the prepared ZrS 2 The size is small, the thickness is difficult

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Put the cleaned 4-inch silicon oxide wafer into the reaction chamber of the atomic layer deposition deposition system; set the temperature in the reaction chamber of the atomic layer deposition deposition system to 250 ° C; use tetrakis(methylethylamino) zirconium as the zirconium precursor, And set its temperature to 80°C, use high-purity argon as its precursor, and the carrier gas flow rate is 100 sccm; use thioacetamide as the sulfur precursor, use high-purity argon as its precursor, and the carrier gas flow rate is 100 sccm ; High-purity argon is used as the cleaning gas, and the flow rate of the cleaning gas is 300 sccm. In a reaction cycle, the steps are as follows: 1) firstly pulse the zirconium precursor into the reaction chamber of the atomic layer deposition system and make it adsorb on the surface of the substrate, the pulse time is 0.5 seconds; Pulse high-purity nitrogen gas into the reaction chamber to clean excess hafnium precursor and reaction by-products...

Embodiment 2

[0020] Put the cleaned 4-inch silicon wafer into the reaction chamber of the atomic layer deposition deposition system; set the temperature in the reaction chamber of the atomic layer deposition deposition system to 300 ° C; use tetrakis(methylethylamino) zirconium as the zirconium precursor, and Set its temperature to 100°C, use high-purity argon as its precursor, and use a carrier gas flow rate of 100 sccm; use thioacetamide as a sulfur precursor, use high-purity argon as its precursor, and use a carrier gas flow rate of 100 sccm; High-purity argon is used as the cleaning gas, and the flow rate of the cleaning gas is 300 sccm. In a reaction cycle, the steps are as follows: 1) firstly pulse the zirconium precursor into the reaction chamber of the atomic layer deposition system and make it adsorb on the surface of the substrate, the pulse time is 0.5 seconds; Pulse high-purity nitrogen gas into the reaction chamber to clean excess hafnium precursor and reaction by-products, th...

Embodiment 3

[0022] Wash one piece of 1×2cm 2 sapphire substrate and 2 x 2cm 2 The mica sheet is placed in the reaction chamber of the atomic layer deposition deposition system; the temperature in the reaction chamber of the atomic layer deposition deposition system is set to 350 ° C; tetrakis (dimethylamino) zirconium is used as the zirconium precursor, and its temperature is set to The temperature is 120°C, high-purity argon is used as its precursor, and the carrier gas flow is 100 sccm; thioacetamide is used as the sulfur precursor, and high-purity argon is used as its precursor, and the carrier gas flow is 100 sccm; high-purity argon is used Gas is used as the cleaning gas, and the flow rate of the cleaning gas is 300 sccm. In a reaction cycle, the steps are as follows: 1) firstly pulse the zirconium precursor into the reaction chamber of the atomic layer deposition system and make it adsorb on the surface of the substrate, the pulse time is 0.5 seconds; Pulse high-purity nitrogen ga...

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PUM

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Abstract

The invention discloses a large-area zirconium disulfide film and an atomic layer deposition preparation method thereof. A zirconium precursor and a sulfur precursor are alternatively introduced intoa reaction cavity, and self-limitation chemical reaction is generated on a substrate surface to grow the large-area zirconium disulfide film. The preparation process comprises 10-5000 growth cycles, and each growth cycle comprises four steps: 1) introducing the zirconium precursor into the reaction cavity of an atomic layer deposition system through pules, and adsorbing the zirconium precursor onto the substrate surface; 2) introducing high-purity nitrogen gas into the reaction cavity of the atomic layer deposition system through pulses to clean excessive zirconium precursor and reaction byproducts; 3) introducing the sulfur precursor into the reaction cavity of the atomic layer deposition system through pulses, and enabling the sulfur precursor and the zirconium precursor adsorbed to thesubstrate surface to generate self-limitation chemical reaction to generate a zirconium disulfide atomic layer; and 4) introducing high-purity nitrogen gas into the reaction cavity of the atomic layerdeposition system through pulses to clean excessive zirconium precursor and reaction byproducts. The large-area zirconium disulfide film has the advantages of being precisely controllable in atomic-level thickness, great in area, uniform, and the like.

Description

Technical field: [0001] The invention relates to the field of layered two-dimensional semiconductor materials, in particular to a large-area zirconium disulfide thin film and an atomic layer deposition preparation method thereof. Background technique: [0002] As an important member of the family of transition metal dichalcogenides (TMDs), zirconium disulfide (ZrS) in group IVB transition metal dichalcogenides (IVB-TMDs) 2 ) in addition to the advantages of TMDs, but also has more excellent properties. First, theoretical calculations show that ZrS 2 Up to 1247cm at room temperature 2 V -1 the s -1 carrier mobility and a thin-layer current density of 800 μA / μm. Second, the monolayer ZrS 2 The theoretically calculated band gap is only 1.08eV, and the narrow band gap makes it very suitable for optoelectronic devices with wide spectral response: Moreover, similar to the formation of SiO by oxidation in the silicon process 2 Insulation layer, ZrS 2 High-quality ultra-thin...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/455C23C16/56
CPCC23C16/305C23C16/45527C23C16/45553C23C16/56
Inventor 张希威孟丹胡丹
Owner ANYANG NORMAL UNIV
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