Large-area zirconium disulfide film and atomic layer deposition preparation method thereof

Abstract

The invention discloses a large-area zirconium disulfide film and an atomic layer deposition preparation method thereof. A zirconium precursor and a sulfur precursor are alternatively introduced intoa reaction cavity, and self-limitation chemical reaction is generated on a substrate surface to grow the large-area zirconium disulfide film. The preparation process comprises 10-5000 growth cycles, and each growth cycle comprises four steps: 1) introducing the zirconium precursor into the reaction cavity of an atomic layer deposition system through pules, and adsorbing the zirconium precursor onto the substrate surface; 2) introducing high-purity nitrogen gas into the reaction cavity of the atomic layer deposition system through pulses to clean excessive zirconium precursor and reaction byproducts; 3) introducing the sulfur precursor into the reaction cavity of the atomic layer deposition system through pulses, and enabling the sulfur precursor and the zirconium precursor adsorbed to thesubstrate surface to generate self-limitation chemical reaction to generate a zirconium disulfide atomic layer; and 4) introducing high-purity nitrogen gas into the reaction cavity of the atomic layerdeposition system through pulses to clean excessive zirconium precursor and reaction byproducts. The large-area zirconium disulfide film has the advantages of being precisely controllable in atomic-level thickness, great in area, uniform, and the like.

Description

Technical field: [0001] The invention relates to the field of layered two-dimensional semiconductor materials, in particular to a large-area zirconium disulfide thin film and an atomic layer deposition preparation method thereof. Background technique: [0002] As an important member of the family of transition metal dichalcogenides (TMDs), zirconium disulfide (ZrS) in group IVB transition metal dichalcogenides (IVB-TMDs) 2 ) in addition to the advantages of TMDs, but also has more excellent properties. First, theoretical calculations show that ZrS 2 Up to 1247cm at room temperature 2 V -1 the s -1 carrier mobility and a thin-layer current density of 800 μA / μm. Second, the monolayer ZrS 2 The theoretically calculated band gap is only 1.08eV, and the narrow band gap makes it very suitable for optoelectronic devices with wide spectral response: Moreover, similar to the formation of SiO by oxidation in the silicon process 2 Insulation layer, ZrS 2 High-quality ultra-thin...

AI Technical Summary

Problems solved by technology

However, the current preparation of atomically thick ZrS 2 The methods are mainly limited to mechanical stripping method, liquid phase stripping method and chemical vapor deposition method, etc.

There are still many problems in these methods, such as: poor compatibility with subsequent device preparation processes, the prepared ZrS 2 The size is small, the thickness is difficult to control accurately, the surface is easy to modify or residual impurities, and the preparation efficiency is low, so it is not suitable for the preparation of large-area, uniform, and precisely controllable thickness of two-dimensional ZrS 2 thin film, which in turn confines the ZrS 2 Applications in the field of high-performance electronic devices and optoelectronic devices