Transverse SiGe heterojunction bipolar transistor with adjustable doping concentration
A technology of heterojunction bipolar and doping concentration, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of sensitivity to the doping concentration level of the emitter region of the device, the influence of semiconductor process deviation, and the change of doping concentration. Achieve the effects of expanding the microwave power working range, increasing the current gain, and increasing the breakdown voltage
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[0024] A lateral SiGe heterojunction bipolar transistor with adjustable doping concentration disclosed in the embodiment of the present invention, taking NPN type lateral SiGe HBT as an example, figure 2 Illustrates a schematic longitudinal section of an embodiment of the present invention, including a Si substrate (20) with a thickness of 20 nm and a doping concentration of 1×10 17 cm -3 ; SiO 2 The buried oxide layer (21) has a thickness of 20nm; the SiGe base region (22) has a thickness of 20nm, a width of 30nm, and a doping concentration of 1×10 19 cm -3 ; Si emitter region (23) and Si collector region (24), thickness is 20nm, and width is 30nm, and doping concentration is 2 * 10 20 cm -3 ; Wherein said SiGe base region (22), Si emitter region (23) and Si collector region (24) are positioned at SiO 2 The top of the buried oxide layer (11); the polysilicon layer (25) is located directly above the SiGe base region (22), and both sides are connected to the SiO 2 Layer ...
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