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Medium-and-low-temperature direct diffusion bonding method of oxygen-free copper and chromium-zirconium-copper

A technology of diffusion connection and chrome-zirconium copper, which is applied in the direction of welding/welding/cutting items, welding equipment, non-electric welding equipment, etc., can solve the problems of high manufacturing cost, increase manufacturing cost, and prolong the manufacturing cycle, so as to avoid scratch defects , Avoid secondary quenching, high connection efficiency

Inactive Publication Date: 2019-12-17
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above methods all need to introduce intermediate materials, which will reduce the thermal conductivity of the overall connection
At the same time, the connection temperature of the above two methods is higher than 475°C, and when the annealing temperature is higher than 475°C (the best aging temperature of chromium-zirconium copper), the second phase in the chromium-zirconium copper will be re-solid-dissolved into the copper matrix Among them, the mechanical properties of chromium-zirconium copper belonging to the second-phase dispersion-strengthened type will decrease, so it is often necessary to perform secondary quenching and aging on chromium-zirconium copper, which greatly prolongs the manufacturing cycle and increases the manufacturing cost.
In addition to the above two methods, the connection of oxygen-free copper and chromium-zirconium copper also has methods such as electron beam welding and laser welding. These methods have defects such as difficult to control parameters, high manufacturing costs, and inability to be used on a large scale.

Method used

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  • Medium-and-low-temperature direct diffusion bonding method of oxygen-free copper and chromium-zirconium-copper

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Embodiment 1. The medium and low temperature direct diffusion bonding process of oxygen-free copper and chromium zirconium copper includes the following steps:

[0029] Step 1) Pretreatment of oxygen-free copper block and chromium zirconium copper block:

[0030] The surface is polished. The surfaces to be connected of the oxygen-free copper block and the chromium-zirconium-copper block with dimensions of 10mm×10mm×5mm and 22mm×12mm×5mm are respectively used 400#, 600#, 800#, 1000#, 1500# metallographic Sand paper smoothly. Among them, every time the sandpaper is changed, the grinding direction is rotated by 90° until the previous grinding marks disappear completely, and finally there are only grinding marks of 1500# sandpaper on the connecting surface;

[0031] polishing. The surface to be connected that has been polished with sandpaper is polished with a 0.5μm diamond polishing agent with high precision, and the surface to be connected is polished to a mirror surface with...

Embodiment 2

[0038] Example 2. Low-temperature direct diffusion bonding process of oxygen-free copper and chromium-zirconium copper. The steps are basically the same as those of Example 1, except that in step 3), the annealing time is changed from 3h to 2.5h.

[0039] Figure 3(b) is a graph of the interlayer shear strength test curve of the oxygen-free copper / chromium-zirconium-copper bonded link of Example 2, and its average shear strength is 95MPa. Fig. 6(b) is a high-magnification scanning electron microscope (SEM) photograph of the morphology of the chromium-zirconium-copper side of the oxygen-free copper / chromium-zirconium-copper connector of Example 2. It can be seen from Figure 6(b) that the shear fracture of the oxygen-free copper / chromium-zirconium-copper connector shows ductile fracture, but compared to Example 1, the dimples become larger and shallower, and the number of dimples is also reduced.

Embodiment 3

[0040] Embodiment 3, the low-temperature direct diffusion bonding process of oxygen-free copper and chromium-zirconium copper, the steps are basically the same as those of embodiment 1, except that in step 3), the annealing time is changed from 3h to 3.5h.

[0041] Figure 4 (c) is a test graph of the interlayer shear strength of the oxygen-free copper / chromium-zirconium-copper connector of Example 2, and its average shear strength is 104 MPa. Fig. 6(c) is a high-magnification scanning electron microscope (SEM) photograph of the morphology of the chromium-zirconium-copper side of the oxygen-free copper / chromium-zirconium-copper connection shear fracture of Example 2. It can be seen from Fig. 6(c) that the shear fracture of the oxygen-free copper / chromium-zirconium-copper connector is ductile fracture, and the dimple size is relatively small, but compared to Example 1, the dimple becomes shallow.

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Abstract

The invention discloses a medium-and-low-temperature direct diffusion bonding method of oxygen-free copper and chromium-zirconium-copper. The method comprises the following steps of carrying out pretreatment including grinding, polishing, ultrasonic cleaning on to-be-bonded surfaces of an oxygen-free copper block body and a chromium-zirconium-copper block body; performing butting and pressurizingfixation on the to-be-bonded surfaces of the pre-treated oxygen-free copper block body and chromium-zirconium-copper block body; and carrying out heat preservation and bonding in an argon protection atmosphere. The bonding method successfully realizes the diffusion and metallurgical bonding of the interfaces between the oxygen-free copper and the chromium-zirconium-copper, the high-strength bonding between the oxygen-free copper / chromium-zirconium-copper, and the maximum shear strength reaches about 136 MPa, and the hardness of the annealed chromium-zirconium-copper meets the requirements that the Brinell hardness of the chromium-zirconium-copper is greater than or equal to 120 in the ITER.

Description

Technical field [0001] The invention belongs to a metal connection technology, in particular to a metal direct connection process that realizes metallurgical bonding under lower connection temperature and non-vacuum pressure conditions, and is specifically the medium and low temperature of oxygen-free copper blocks and chromium-zirconium-copper blocks Direct diffusion bonding process. Background technique [0002] The ITER device is a superconducting tokmak that can produce large-scale nuclear fusion reactions, commonly known as "artificial sun". Controlled thermonuclear fusion energy is expected to become one of the main energy sources in the new century, and plasma-oriented components are the key components of nuclear fusion engineering. Plasma-oriented components require materials that are resistant to high temperatures and have high thermal conductivity, as well as a low ion beam sputtering rate. Because tungsten is a rare high melting point metal (3410°C), its chemical pro...

Claims

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Application Information

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IPC IPC(8): B23K20/00B23K20/24B23K103/18
CPCB23K20/001B23K20/24B23K2103/18
Inventor 黄远赵璨王祖敏刘永长
Owner TIANJIN UNIV
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