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A kind of method for preparing silicon/silicon carbide material at low temperature

A technology of silicon carbide and low temperature, applied in the direction of chemical instruments and methods, carbon compounds, silicon compounds, etc., can solve the problems of high energy consumption and high cost, and achieve the effect of reducing energy consumption, low cost and environmental friendliness

Active Publication Date: 2021-10-15
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reaction temperatures of the above methods are all higher than 1500°C, and the energy consumption is large and the cost is high.

Method used

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  • A kind of method for preparing silicon/silicon carbide material at low temperature
  • A kind of method for preparing silicon/silicon carbide material at low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Under the nitrogen protective atmosphere, ball mill 30g of balls and 1g of magnesium silicide at 500r / min for 24h, then transfer the evenly ground mixture to a closed reactor; vacuumize the reactor and introduce 10bar CO 2 gas, then heated to 650°C at a heating rate of 2°C / min and kept for 5h.

[0026] After cooling to room temperature, take out the product in the reactor, soak the product in 1mol / L dilute hydrochloric acid for 30 minutes, wash with deionized water for 3 times, wash with alcohol for 3 times, then suction filter, and finally dry at 80°C A Si / SiC composite material is obtained. The X-ray diffraction (XRD) figure of prepared silicon / silicon carbide material, such as figure 1 As shown, the diffraction peaks correspond to the standard PDF cards of silicon (PDF#27-1402) and silicon carbide (PDF#29-1129), proving that the material is a silicon / silicon carbide composite material. Such as figure 2 Shown is the SEM image of the material, in which it can be se...

Embodiment 2

[0028] Under the protective atmosphere of argon, ball mill 25g of balls and 1g of magnesium silicide under the condition of 300r / min for 108h, and then transfer the evenly ground mixture to a closed reactor; vacuumize the reactor and introduce 1bar CO 2 gas, then heated to 1000°C at a heating rate of 0.5°C / min, and held for 0.5h.

[0029] After cooling to room temperature, take out the product in the reactor, soak the product in 1mol / L dilute hydrochloric acid for 30 minutes, wash twice with deionized water, wash twice with alcohol, then filter with suction, and finally dry it at 70°C A Si / SiC composite material is obtained.

Embodiment 3

[0031] Under the nitrogen protective atmosphere, ball mill 30g of balls and 1g of magnesium silicide at 1000r / min for 6h, and then transfer the evenly ground mixture to a closed reactor; vacuumize the reactor and introduce 80bar CO 2 gas, then heated to 300°C at a heating rate of 10°C / min, and kept for 10h.

[0032] After cooling to room temperature, take out the product in the reactor, soak the product in 1mol / L dilute hydrochloric acid for 30 minutes, wash with deionized water for 3 times, wash with alcohol for 3 times, then suction filter, and finally dry at 80°C A Si / SiC composite material is obtained.

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Abstract

The invention relates to a method for directly capturing CO by using magnesium silicide as a raw material 2 Method for preparing silicon / silicon carbide at low temperature. Silicon / silicon carbide material is a new type of material that has been widely studied and applied in recent years. It has the characteristics of wear resistance, corrosion resistance and high temperature resistance, and is widely used in the fields of machinery, chemical industry and metallurgy. At present, the preparation processes of silicon / silicon carbide materials mainly include pressureless liquid phase sintering, hot pressing sintering, reaction sintering and precursor conversion. The reaction temperatures of the above methods are all greater than 1500° C., and the energy consumption is large and the cost is high. This paper provides a method to directly capture CO using magnesium silicide as a raw material. 2 A method for preparing silicon / silicon carbide at low temperature, which can react at 300°C. It also captures CO 2 gases that mitigate the greenhouse effect.

Description

technical field [0001] The invention relates to a method of directly capturing CO by using magnesium silicide as a raw material 2 Method for preparing silicon / silicon carbide at low temperature. Background technique [0002] Silicon carbide ceramics have the characteristics of high thermal conductivity, small thermal expansion coefficient, good thermal stability, strong oxidation resistance, excellent mechanical properties and corrosion resistance. widely favored. However, silicon carbide is composed of strong covalent bonds, which not only makes silicon carbide have the characteristics of high thermal conductivity, good thermal stability, and excellent mechanical properties, but also makes it difficult to prepare. In comparison, silicon / silicon carbide material is a new type of material that has been widely studied and applied in recent years. It has the characteristics of wear resistance, corrosion resistance and high temperature resistance, and is widely used in the fie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/963C01B33/021
CPCC01B33/021C01P2004/80C01B32/963
Inventor 黄辉卞飞翔余佳阁梁初夏阳甘永平张俊张文魁
Owner ZHEJIANG UNIV OF TECH