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Photoresist composition, preparation method and patterning method

A composition and photoresist technology, applied in the field of photoresist, can solve the problems that the resolution cannot meet the high resolution, the improvement of the resolution is not obvious, and the resolution cannot be obtained. Light-sensitive, fast-sensitivity effects

Active Publication Date: 2019-12-20
BEIJNG ASAHI ELECTRONICS MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The photoresist resin of this invention can achieve pattern uniformity by satisfying heat resistance, photosensitivity and film thickness uniformity, but the formed line width is more than 3 μm, and the resolution cannot meet the requirements of high resolution
Chinese patent CN102786662A relates to a polymer photosensitizer and photoresist composition. The photoresist has good sensitivity and film-forming properties, but the optimal resolution is 3.0 μm, and higher resolution cannot be obtained
The better the heat resistance of the photoresist, the better the formation of fine graphics. Chinese patent CN104614942A proposes a high heat-resistant film-forming resin and its positive-type photoresist composition. The film-forming resin is silicone-modified Nolinear phenolic resin can improve heat resistance and dry etching resistance, but because only g-line photosensitive compounds are used, the improvement of resolution is not obvious

Method used

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  • Photoresist composition, preparation method and patterning method
  • Photoresist composition, preparation method and patterning method
  • Photoresist composition, preparation method and patterning method

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preparation example Construction

[0068] Embodiments of the present invention disclose a method for preparing a photoresist composition, comprising the following steps:

[0069] Mix and dissolve 1-10wt% photosensitive agent, 10-20wt% phenolic resin, and 0.1-5.5wt% additive in 75-88wt% solvent to obtain a photoresist composition; wherein, the photosensitive agent includes 20- 70wt% of the first photosensitive compound represented by formula (1), 20-70wt% of the second photosensitive compound represented by formula (2), and 1-35wt% of formula (3);

[0070] in,

[0071]

[0072]

[0073] Among them, R 1 , R 2 , R 3 , R 4 independently selected from the structure shown in formula (4), the structure shown in formula (5) or a hydrogen atom, and R 1 , R 2 , R 3 , R 4 At least three of them are structures shown in formula (4) or formula (5);

[0074] R 5 , R 6 , R 7 independently selected from the structure shown in formula (4), the structure shown in formula (5) or a hydrogen atom, and R 5 , R 6 ,...

Embodiment 1～9

[0090] 13 g of phenolic resin, 3 g of photosensitive agent, 0.5 g of surfactant, 1.5 g of adhesion promoter and 82 g of solvent were mixed to obtain a photoresist composition.

[0091] Above-mentioned phenolic resin is made by reacting cresol, xylenol and formaldehyde, molecular weight is 4000;

[0092] The surfactant is a fluorocarbon;

[0093] The adhesion promoter is a melamine resin;

[0094] Described solvent is propylene glycol methyl ether acetate;

[0095] The photosensitizer includes a first photosensitive compound shown in formula (1), a second photosensitive compound shown in formula (2), and a third photosensitive compound shown in formula (3);

[0096]

[0097]

[0098] R 1 , R 2 , R 3 , R 4 At least three of them are structures shown in formula (4), and the rest are hydrogen atoms;

[0099] R 5 , R 6 , R 7 At least one of them is the structure shown in formula (4); n 1 is 1;

[0100] R 8 is the structure shown in formula (4), n 2 for 12.

[0...

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Abstract

The invention relates to the field of photoresists, in particular to a photoresist composition, a preparation method and a patterning method. The photoresist composition comprises the following components: 1-10 wt% of a photosensitizer and the balance of a solvent, 10-20 wt% of phenolic resin; 0.1-5.5 wt% of an additive; 75-88 wt% of a solvent; wherein the photosensitizer comprises 20-70 wt% of afirst photosensitive compound represented by a formula (1), 20-70 wt% of a second photosensitive compound represented by a formula (2), and 1-35 wt% of a third photosensitive compound represented by aformula (3). The photoresist composition provided by the invention ensures the resolution and sensitivity at the same time so as to meet the requirements of actual production. Through experimental tests, the resolution ratio of the photoresist composition is lower than 2.5 microns, and the minimum resolution ratio can reach 1.5 microns; meanwhile, the sensitivity is high, the accurate patterningis facilitated, and the yield of an OLED display panel is increased.

Description

technical field [0001] The invention relates to the field of photoresist, in particular to a photoresist composition, a preparation method and a patterning method. Background technique [0002] Photoresist is one of the important upstream materials for the manufacture of organic light-emitting diode (OLED) panels. It is a composition used for pattern transfer and is usually divided into positive photoresist and negative photoresist. The method of using a positive photoresist to form a pattern is to coat a layer of photoresist on the substrate and expose the photoresist through a mask plate. After exposure, the solubility of the photoresist in the alkaline solution will change. , the solubility of the exposed part is increased, and the solubility of the unexposed part is weakened, and the required pattern is formed on the substrate after being developed by an alkaline solution. Commonly used exposure light sources are G-line (436nm) and I-line (365nm). G-line photoresist has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F1/76
CPCG03F7/004G03F1/76G03F7/0048G03F7/085G03F7/0007G03F7/022G03F7/023G03F7/0236G03F7/0045G03F7/11G03F7/34G03F7/30G03F7/32G03F7/0226G03F7/38G03F7/36G03F7/40
Inventor 张腾卢克军朴大然胡凡华
Owner BEIJNG ASAHI ELECTRONICS MATERIAL CO LTD
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