Manufacturing process of high-performance substrate

A manufacturing process and high-performance technology, applied in the direction of manufacturing tools, fine working devices, stone processing equipment, etc., can solve the problem of high substrate stress, inability to effectively control WarpBow to effectively reduce, and uncontrolled substrate stress in the fine grinding section, etc. problems, to achieve the effect of reducing the influence of deformation, low stress response, and high flatness

Active Publication Date: 2020-02-04
FUJIAN JING AN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, because the rough grinding section removes a considerable amount of substrate thickness, it is very likely that the stress of the substrate itself will be too large, exceeding the limit of the substrate itself.
And the stress of the substrate is too large, which may lead to the uncontrolled stress of the substrate in the fine grinding section, and the effective reduction of Warp and Bow cannot be effectively controlled.

Method used

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  • Manufacturing process of high-performance substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] refer to figure 1 , a high-performance substrate manufacturing process, the specific steps of the manufacturing process are as follows:

[0028] (1) Wire cutting: use a multi-wire cutting machine, cutting wire and cutting fluid, select a suitable ingot, cut off the crystal neck, fix the ingot on the rotating clamping device, and use the multi-wire cutting machine that moves up and down, Slice the ingot to obtain a sapphire blank; the flatness index Warp after wire cutting is about 40 μm, and the Bow is about 8 μm;

[0029] (2) The first rough grinding: using a double-sided rough grinder, the sapphire blank is subjected to the first rough grinding with a boron carbide abrasive, and the thickness of the sapphire substrate is removed by 40-50 μm;

[0030] (3) The first annealing: Put the blank after the first rough grinding into the heating furnace to raise the temperature. 30 minutes; the third heating temperature is 1400°C, constant temperature for 100 minutes; the fir...

Embodiment 2

[0040] refer to figure 1 , a high-performance substrate manufacturing process, the specific steps of the manufacturing process are as follows:

[0041] (1) Wire cutting: use a multi-wire cutting machine, cutting wire and cutting fluid, select a suitable ingot, cut off the crystal neck, fix the ingot on the rotating clamping device, and use the multi-wire cutting machine that moves up and down, Slice the ingot to obtain a sapphire blank; the flatness index Warp after wire cutting is about 40 μm, and the Bow is about 8 μm;

[0042] (2) The first rough grinding: using a double-sided rough grinder, the sapphire blank is subjected to the first rough grinding with a boron carbide abrasive, and the thickness of the sapphire substrate is removed by 40-50 μm;

[0043](3) The first annealing: Put the blank after the first rough grinding into the heating furnace to raise the temperature. The temperature of the first heating is 450°C, and the temperature is kept constant for 50 minutes; ...

Embodiment 3

[0053] refer to figure 1 , a high-performance substrate manufacturing process, the specific steps of the manufacturing process are as follows:

[0054] (1) Wire cutting: use a multi-wire cutting machine, cutting wire and cutting fluid, select a suitable ingot, cut off the crystal neck, fix the ingot on the rotating clamping device, and use the multi-wire cutting machine that moves up and down, Slice the ingot to obtain a sapphire blank; the flatness index Warp after wire cutting is about 40 μm, and the Bow is about 8 μm;

[0055] (2) The first rough grinding: using a double-sided rough grinder, the sapphire blank is subjected to the first rough grinding with a boron carbide abrasive, and the thickness of the sapphire substrate is removed by 40-50 μm;

[0056] (3) The first annealing: Put the blank after the first rough grinding into the heating furnace to raise the temperature. 40 minutes; the third heating temperature is 1450°C, constant temperature for 150 minutes; the fir...

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Abstract

The invention discloses a manufacturing process of a high-performance substrate. The manufacturing process of the high-performance substrate comprises the following steps of line cutting, first coarsegrinding, first annealing, second coarse grinding, fine grinding, chamfering, cleaning, second annealing, copper polishing and polishing, wherein a superfine grinding machine is adopted, double-sidedfine grinding and thinning are carried out on a sapphire substrate. Warp is controlled to be 15 micrometres after the fine grinding is carried out, and Bow is controlled to be 4 micrometres or within; and after the scheme is adopted, the manufacturing process of the high-performance substrate reduces maximally the deformation influence of stress on the fine grinding, so that the substrate can obtain higher flatness and lower stress reaction in the fine grinding.

Description

technical field [0001] The invention relates to a manufacturing process of a high-performance substrate. Background technique [0002] The process of preparing sapphire substrates is mainly divided into three major areas: cutting, grinding and polishing. Among them, wire cutting and grinding both cause great stress to the substrate itself. [0003] Among them, the grinding process technology generally adopts two-stage grinding due to the cost and back roughness requirements. The first stage is fast thinning, and the second stage is to establish back roughness. The key to controlling the shape of the substrate lies in the ability of the rough grinding stage to repair the substrate flatness after wire cutting, and the grinding process is a key process for the substrate flatness. . At present, the industry is all segmented grinding (generally referred to as coarse grinding, fine grinding). Among them, because the rough grinding section removes a considerable amount of subst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B24B1/00C30B33/02C30B29/20B08B3/12
CPCB28D5/045B24B1/00C30B33/02C30B29/20B08B3/12
Inventor 宋淀垣陈文海谢斌辉萧尊
Owner FUJIAN JING AN OPTOELECTRONICS CO LTD
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