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Polarization beam splitter with asymmetric three-waveguide structure and preparation method of polarization beam splitter

A polarization beam splitter and waveguide technology, applied in the field of optical communication, can solve the problems of sensitive bandwidth limitation and large size, and achieve the effect of small size, large working bandwidth and increased working bandwidth

Active Publication Date: 2020-02-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

This structure is simple in design, but large in size and sensitive to bandwidth limitations

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  • Polarization beam splitter with asymmetric three-waveguide structure and preparation method of polarization beam splitter
  • Polarization beam splitter with asymmetric three-waveguide structure and preparation method of polarization beam splitter
  • Polarization beam splitter with asymmetric three-waveguide structure and preparation method of polarization beam splitter

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Embodiment Construction

[0038] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0039] see figure 1 and figure 2 As shown, the present invention provides a polarization beam splitter with an asymmetric three-waveguide structure, including: SO1 substrate layer 100 and waveguide layer 200, wherein,

[0040] SOI substrate layer 100, comprising a bottom Si material layer 130, a silicon dioxide buried layer 120 formed above the bottom Si material layer, and a cladding layer 110 covering above the waveguide layer;

[0041] The waveguide layer 200 is fabricated on the silicon dioxide buried layer 120, including an input waveguide 210, a TM mode coupling waveguide 220, and a TE mode coupling waveguide 230, and the input waveguide 210 includes a bottom waveguide 211 and a dielectric cover layer 212; wherein...

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Abstract

A polarization beam splitter comprises an SOI substrate layer and a waveguide layer; the SOI substrate layer comprises a bottom Si material layer and a silicon dioxide landfill layer manufactured on the bottom Si material layer; the waveguide layer is manufactured over the silicon dioxide landfill layer and comprises an input waveguide, a TM mode coupling waveguide and a TE mode coupling waveguide; the input waveguide comprises a bottom layer waveguide and a dielectric cover layer; and the waveguide layer is used for limiting a TE wave and a TM wave in a TE mode coupling waveguide and a TM mode coupling waveguide respectively so as to separate light in different polarization modes in the input waveguide. The waveguide layer of a three-waveguide structure is adopted and comprises the inputwaveguide, the TM coupling waveguide and the TE coupling waveguide, the TE mode and the TM mode are limited in the waveguides on the two sides respectively, so that different polarization states in the input waveguide are coupled respectively, and influence of a residual mode of the input waveguide on the performance of the device is eliminated.

Description

technical field [0001] The invention relates to the field of optical communication, in particular to a polarization beam splitter with an asymmetric three-waveguide structure and a preparation method thereof. Background technique [0002] With the rise and development of emerging technologies such as "artificial intelligence", "cloud computing" and "cloud storage", the requirements for the speed and capacity of data communication have reached unprecedented heights. However, as Moore's Law gradually breaks through the limit, pure microelectronics technology no longer meets the needs. In order to solve this series of problems, photonic circuits and optical interconnections have gradually entered people's field of vision. The optical interconnection network using photonic integration can break the bottleneck of traditional integrated circuits and realize ultra-high speed, ultra-low power consumption, and ultra-large capacity signal transmission and processing. [0003] SiO on ...

Claims

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Application Information

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IPC IPC(8): G02B6/10G02B6/126
CPCG02B6/105G02B6/126
Inventor 牛超群刘智成步文
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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