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A preparation method for improving the output of photodetector chips

A technology of photodetector and preparation process, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc. It can solve the problems of poor stability, large dark current, and low production efficiency, and achieve increased chip output rate and spacing The effect of reducing and improving production efficiency

Active Publication Date: 2020-11-24
武汉敏芯半导体股份有限公司
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  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a preparation method for improving the output of photodetector chips in view of the defects of large dark current, poor stability and low production efficiency in the prior art

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  • A preparation method for improving the output of photodetector chips
  • A preparation method for improving the output of photodetector chips
  • A preparation method for improving the output of photodetector chips

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Embodiment Construction

[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0036] Such as figure 1 As shown, the steps of the preparation process method for improving the output of the photodetector chip according to the embodiment of the present invention are as follows:

[0037] S1. Epitaxial wafer cleaning, ohmic contact ring 7 photolithography and corrosion;

[0038] S2, SiO 2 Diffusion barrier film 3 is deposited, photolithography and etching of diffusion hole 2 are performed, and conductive medium diffusion is performed to form Zn diffusion region 6;

[0039] S3. Depositing the SiNx anti-reflection film 4, then photoetching the P window 9 and the cleavage channel...

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Abstract

The invention discloses a preparation process method for improving the photoelectric detector chip yield. Ohmic ring photoetching and corrosion are firstly completed on an epitaxial wafer, and SiO2 diffusion barrier film deposition is carried out; then diffusion holes are formed, conducting medium diffusion is carried out, and after conducting medium diffusion is completed, SiNx antireflection film deposition, and P window and cleavage channel photoetching are carried out, P window and cleavage channel etching are carried out, and annealing treatment is carried out; and then manufacturing of aP electrode and an N electrode is carried out. The performance and the stability of manufacturing the photoelectric detector chip can be improved, the chip yield is improved by more than 30%, the production efficiency of the photoelectric detector chips is greatly improved, and the production cost is effectively saved.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a preparation process method for improving the output of photodetector chips. Background technique [0002] The rapid development of optical fiber communication has gradually replaced the traditional information communication method with electrons as the carrier, and photons as the propagation carrier to achieve a huge increase in communication capacity. The surge in data transmission has put forward higher requirements for the response speed and sensitivity of optoelectronic devices. As a key module of optical signal detection in optical receivers, the performance and process research of photodetectors has become the focus of relevant institutions. The performance of the photodetector determines its detection effect, and also determines the signal transmission quality of the entire optical fiber communication system. Therefore, designing a high-stability, high-performa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/105
CPCH01L31/105H01L31/1844Y02P70/50
Inventor 王权兵王丹徐之韬余沛
Owner 武汉敏芯半导体股份有限公司
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