Preparation method of nanoscale ultra-pure silicon oxide microsphere powder

A silicon oxide microsphere and nano-scale technology, applied in the direction of silicon oxide, silicon dioxide, chemical instruments and methods, etc., can solve the problems of difficult development in the field of electronic technology packaging, complicated preparation and operation technology, poor particle uniformity, etc., to achieve true The effect of good roundness, less purity and low production cost

Active Publication Date: 2020-02-21
苏州料金气体有限公司
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Problems solved by technology

The preparation and operation technology of this method is still relatively complicated, the steps are relatively cumbersome, the roundness of the powder is poor, and the uniformity of the particles is poor.
[0005] Therefore, the traditional silicon oxide microsphere powder material is subject to certain restrictions in the application field, and it is difficult to develop better in the field of electronic technology packaging in the post-Moore's Law era.

Method used

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  • Preparation method of nanoscale ultra-pure silicon oxide microsphere powder
  • Preparation method of nanoscale ultra-pure silicon oxide microsphere powder
  • Preparation method of nanoscale ultra-pure silicon oxide microsphere powder

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Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0024] Such as figure 2 As shown, a preparation device for nano-scale microsphere powder includes a reaction chamber 6, the reaction chamber 6 is a closed chamber, the ambient temperature is 50-150°C, and the reaction chamber 6 is provided with a first container 2 and an electron gun 3 , the first container 2 is made of graphite, for example, the first container 2 can be a crucible made of graphite, silicon 1 is arrange...

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Abstract

The invention discloses a preparation method of nanoscale ultra-pure silicon oxide microsphere powder. The preparation method comprises the steps: putting silicon into a first container which is madeof graphite, putting the first container into an airtight reaction cavity with the environment temperature of 50-150 DEG C, connecting the first container with an anode of a current controller, and connecting a cathode of the current controller with an electronic gun; making the electron gun generate electron beams to bombard the silicon by controlling the current controller, and enabling the silicon to generate silicon steam molecules; and after the silicon steam molecules reach a certain pressure in the reaction cavity, introducing oxygen in a corresponding proportion into the reaction cavity, controlling the working reaction pressure in the reaction cavity to be 2*10<-3>-5*10<-3> Pa, and carrying out a reaction to obtain the silicon oxide microsphere powder. Silicon is bombarded by theelectron beams to generate the silicon steam molecules, the silicon steam molecules are combined with ultra-pure oxygen having the corresponding proportion and introduced into the reaction cavity to react, and due to intermolecular combination, the formed microspheres are small in particle size, good in roundness, low in energy consumption and high in production efficiency.

Description

technical field [0001] The invention relates to the technical field of nanomaterial powder preparation, in particular to a preparation method of nanoscale ultra-high-purity silicon oxide microsphere powder. Background technique [0002] In the field of electronic packaging, 97% of semiconductor devices all use epoxy molding compound (EMC) as the packaging outer material, and the key insulating filling material in epoxy molding compound is silicon oxide microsphere powder, silicon oxide microsphere powder It accounts for more than 70% of the entire epoxy molding compound, and more than 90% for many high-end chips. With the global demand for electronic products increasing year by year, the demand for silica microsphere powder is also increasing year by year. In addition, silicon oxide microsphere powder is also used in the insulating layer filler of electronic copper-clad circuit board (CCL) in the field of electronic circuits, and the demand is also increasing. With the mini...

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Application Information

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IPC IPC(8): C01B33/18B82Y30/00B82Y40/00
CPCC01B33/181B82Y30/00B82Y40/00C01P2004/64C01P2004/62C01P2006/80
Inventor 王峰潘革波黄伟赵海琴周林华
Owner 苏州料金气体有限公司
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