Quantum dot light emitting diode

A quantum dot light-emitting and diode technology, which is applied in nanotechnology, electrical components, nanotechnology, etc., can solve the problems of low device efficiency and service life, and achieve the effects of improving service life, reducing operating voltage and improving electron transmission

Pending Publication Date: 2020-03-17
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode, which aims to solve the problem of low device efficiency / service life

Method used

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Examples

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Comparison scheme
Effect test

Embodiment 1

[0343] Example 1: 1) The quantum dot light-emitting diode structure includes a glass substrate, an ITO anode, a hole injection layer, a 35nm hole transport layer, a 20nm quantum dot light emitting layer, and a 40 nm electron transport layer arranged in sequence from bottom to top and 100nm cathode. The surface ligands of the quantum dot light-emitting layer are octadecylphosphoric acid and Cl - CdZnS / ZnS quantum dot layer with mixed ligands. The preparation method of the quantum dot light-emitting diode device is as follows:

[0344] 2) A hole injection layer and a 35 nm hole transport layer are coated sequentially on the ITO bottom electrode.

[0345] 3) Using surface ligands as stearyl phosphate and Cl - A heptane solution of CdZnS / ZnS quantum dots mixed with ligands was used to form a 20nm quantum dot light-emitting layer on the hole transport layer using a spin-coating method with a rotation speed of 2000rpm.

[0346] 4) Spin-coat the ZnO methanol solution on the quant...

Embodiment 2

[0349] Example 2: 1) The quantum dot light emitting diode structure includes a glass substrate, an ITO anode, a hole injection layer, a 35nm hole transport layer, a 40nm quantum dot light emitting layer, and a 50 nm electron transport layer arranged in sequence from bottom to top and 100nm cathode. The quantum dot luminescent layer is a CdZnSe / ZnSe quantum dot layer and a polar CdZnSe / ZnSe quantum dot luminescent layer whose surface ligands are mixed ligands of octadecylphosphoric acid and 3-mercaptopropionic acid, and each layer is 20nm. The preparation method of the quantum dot light-emitting diode device is as follows:

[0350] 2) A hole injection layer and a 35 nm hole transport layer are coated sequentially on the ITO bottom electrode.

[0351] 3) Using 20 mg / ml of luminescent quantum dot heptane solution, on the hole transport layer, use a spin-coating method with a rotation speed of 2000 rpm to form a CdZnSe / CdZnSe with octadecylphosphoric acid and 3-mercaptopropionic ...

Embodiment 3

[0355] Example 3: 1) The quantum dot light-emitting diode structure includes a glass substrate, an ITO anode, a hole injection layer, a 20 nm hole transport layer, a 30 nm quantum dot light emitting layer, and a 60 nm electron layer arranged in sequence from bottom to top. Transport layer and 80 nm cathode. The surface ligands of the light-emitting layer are octylthiol and Br - Mixed ligand CdZnSe / ZnSe quantum dot layer, polar CdZnSe / ZnSe quantum dot light-emitting layer, surface ligands are octylthiol and Br - Mixed ligand CdZnSe / ZnSe quantum dot layer, each layer 10nm. The preparation method of the quantum dot light-emitting diode device is as follows:

[0356] 2) A hole injection layer and a 20 nm hole transport layer are coated sequentially on the ITO bottom electrode.

[0357] 3) Use 20mg / ml of octylthiol and Br - A heptane solution of CdZnSe / ZnSe quantum dots with mixed ligands was formed on the hole transport layer by spin coating at a speed of 2000rpm. The surface ...

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Abstract

The invention discloses a quantum dot light emitting diode. The quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and thecathode, wherein the quantum dot light-emitting layer comprises a first quantum dot light-emitting layer, the first quantum dot light-emitting layer is made of a first composite material, and the first composite material comprises light-emitting quantum dots, first halogen ligands and first oil-soluble organic ligands, and the first halogen ligands and the first oil-soluble organic ligands are combined on the surfaces of the light-emitting quantum dots. Compared with the existing oil-soluble composite material of which the surface is pure oil-soluble organic ligands, in the oil-soluble firstcomposite material, the first halogen ligands can improve the electron transport property of quantum dots and improve the transport rate of carriers in a light-emitting layer, so that the electron transport rate and the hole transport rate in the light-emitting layer of a device are balanced, the light-emitting efficiency of the device is improved, the working voltage is reduced, and the service life of the device is prolonged.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting devices, in particular to a quantum dot light emitting diode. Background technique [0002] In recent years, due to the characteristics of high quantum efficiency, high optical purity, and adjustable emission wavelength, colloidal quantum dots have become the most promising new display materials. At present, researchers have prepared quantum dot materials with photoluminescence efficiency as high as 100%, which are used in biomarkers, sensor devices and light-emitting diodes (LEDs). [0003] In the preparation process of quantum dot light-emitting diodes, the external quantum efficiency of the device is very low. According to reports, the device efficiency of red, green and blue is less than 20%. Why is there such a big difference between the photoluminescence efficiency and electroluminescence efficiency of quantum dot materials? This is mainly because quantum dot materials use light ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54B82Y30/00
CPCB82Y30/00H10K50/115H10K50/11H10K2102/00
Inventor 覃辉军
Owner TCL CORPORATION
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