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Silicon carbide crystal, growth method and growth device thereof, semiconductor device, and display device

A growth method, silicon carbide technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of low yield, improve the yield of a single furnace, avoid inconsistent thermal stress, improve yield and product quality effect

Active Publication Date: 2020-03-24
FUJIAN NORSTEL MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current large-scale production of SiC crystal growth process generally only grows one crystal in one furnace, and the yield is low

Method used

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  • Silicon carbide crystal, growth method and growth device thereof, semiconductor device, and display device
  • Silicon carbide crystal, growth method and growth device thereof, semiconductor device, and display device
  • Silicon carbide crystal, growth method and growth device thereof, semiconductor device, and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0100] The growth method of silicon carbide crystal comprises the following steps:

[0101] Fill the graphite crucible from the bottom to the top in sequence with SiC powder, a porous graphite plate, and paste two 6-inch 4H seed crystals (referring to the Si surface of the 4H seed crystal of the two seed crystals that exposes the 4H The C surface of the seed crystal is used to grow the 4H seed crystal, wherein the distance between the surface of the two seed crystals and the bottom and top of the crucible is 1:1), and the porous graphite plate and SiC powder are covered with a graphite cover . Put the graphite crucible into the temperature field constructed by the insulation felt, and then put the whole into the SiC single crystal growth furnace, and first evacuate to a pressure of 1×10 -5 Below mbar, fill with argon to control the pressure at 500mbar. Turn on the water-cooled induction coil and energize the graphite crucible to inductively heat the graphite crucible. At the ...

Embodiment 2

[0103] The growth method of the silicon carbide crystal is the same as in Example 1, except that the C faces of the 6H seed crystals of the two silicon carbide seed crystals are attached to each other to expose the Si face of the 6H seed crystal for growing the 6H seed crystal.

Embodiment 3

[0105] The growth method of the silicon carbide crystal is the same as in Example 1, except that the Si face of the 4H seed crystal of one of the two silicon carbide seed crystals is attached to the C face of the 6H seed crystal of the other silicon carbide seed crystal. combine.

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Abstract

The invention provides a silicon carbide crystal, a growth method and a growth device thereof, a semiconductor device and a display device, and relates to the technical field of crystal growth. The growth method of the silicon carbide crystal comprises the following steps: contacting the first surface of a first silicon carbide seed crystal layer with the third surface of a second silicon carbideseed crystal layer; and growing silicon carbide crystals on the second surface of the first silicon carbide seed crystal layer and the fourth surface of the second silicon carbide seed crystal layer respectively, wherein the first surface and the second surface are two opposite surfaces of the first silicon carbide seed crystal layer, and the third surface and the fourth surface are two opposite surfaces of the second silicon carbide seed crystal layer. The method has the advantages of simplicity and convenience in operation, easiness in implementation, realization of simultaneous growth of two silicon carbide crystals, and high yield.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a silicon carbide crystal, a growth method and device thereof, a semiconductor device and a display device. Background technique [0002] Silicon carbide (SiC) material is a representative of the third-generation wide bandgap semiconductor material, which has the characteristics of wide bandgap, high thermal conductivity, high breakdown electric field, and high radiation resistance. At present, physical vapor deposition (PVT) is the main growth method for silicon carbide crystals. During the growth process, a suitable temperature field needs to be established so that the gas phase components Si, Si 2 C, SiC 2 Stable growth on the seed crystal. The current SiC crystal growth process for large-scale production generally only grows one crystal in one furnace, and the yield is low. [0003] In view of this, the present invention is proposed. Contents of the invention [...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/02
CPCC30B23/025C30B29/36
Inventor 邓树军张洁汪良付芬
Owner FUJIAN NORSTEL MATERIAL TECH CO LTD