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Thermistor added with titanium oxide and preparation method thereof

A thermistor, titanium oxide technology, applied in the direction of adding terminal resistors, resistor manufacturing, resistors with negative temperature coefficient, etc., can solve the problems of small resistivity, narrow temperature measurement range, unable to meet special customers, etc. To achieve the effect of good linearity and strong stability

Inactive Publication Date: 2020-03-24
JURONG BOYUAN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the original technology of manganese, cobalt, nickel, and iron quaternary formula, before adding special additives, if the B value reaches 3700-3900K, the resistivity can only be 10-50 (kΩ.mm). The rate is small and the temperature measurement range is narrow, which cannot meet the requirements of special customers

Method used

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  • Thermistor added with titanium oxide and preparation method thereof
  • Thermistor added with titanium oxide and preparation method thereof
  • Thermistor added with titanium oxide and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The formula of the thermistor in this example is as follows:

[0029]

[0030] The preparation method is as follows: (1) Mn 2 o 3 、Co 2 o 3 、Ni 2 o 3 , Fe 2 o 3 、TiO 2 Mix to obtain a powder mixture, add 30% ethanol by weight of the above powder mixture, 70% binder (CK24), and 5% dispersant (BYK110), and mix evenly to form a slurry;

[0031] (2) Put the slurry obtained in step (1) in a vacuum box, and use a catheter to absorb the slurry on the carrier film to obtain a film with a thickness of 20-70 μm, which is circularly conveyed and dried in an oven at 30-60 ° C. Layers, cycle production to the designed number of layers and thickness, after drying, separate, cut, deglue, and sinter to obtain ceramic pieces;

[0032] (3) Coating silver electrodes on both sides of the sintered tile;

[0033] (4) Divide it into the required size according to the resistance value requirement, that is to say.

Embodiment 2

[0035] The formula of the thermistor in this example is as follows:

[0036]

[0037]

[0038] The preparation method is as follows: (1) Mn 2 o 3 、Co 2 o 3 、Ni 2 o 3 , Fe 2 o 3 、TiO 2 Mix to obtain a powder mixture, add 40% ethanol by weight of the above powder mixture, 60% binder (CK24), and 10% dispersant (BYK110), and mix evenly to form a slurry;

[0039] (2) Put the slurry obtained in step (1) in a vacuum box, and use a catheter to absorb the slurry on the carrier film to obtain a film with a thickness of 20-70 μm, which is circularly conveyed and dried in an oven at 30-60 ° C. Layers, cycle production to the designed number of layers and thickness, after drying, separate, cut, deglue, and sinter to obtain ceramic pieces;

[0040] (3) Coating silver electrodes on both sides of the sintered tile;

[0041] (4) Divide it into the required size according to the resistance value requirement, that is to say.

Embodiment 3

[0043] The formula of the thermistor in this example is as follows:

[0044]

[0045] The preparation method is as follows: (1) Mn 2 o 3 、Co 2 o 3 、Ni 2 o 3 , Fe 2 o 3 、TiO 2 Mix to obtain a powder mixture, add 50% ethanol by weight of the above powder mixture, 50% binder (CK24), and 8% dispersant (BYK110), and mix evenly to form a slurry;

[0046] (2) Put the slurry obtained in step (1) in a vacuum box, and use a catheter to absorb the slurry on the carrier film to obtain a film with a thickness of 20-70 μm, which is circularly conveyed and dried in an oven at 30-60 ° C. Layers, cycle production to the designed number of layers and thickness, after drying, separate, cut, deglue, and sinter to obtain ceramic pieces;

[0047] (3) Coating silver electrodes on both sides of the sintered tile;

[0048] (4) Divide it into the required size according to the resistance value requirement, that is to say.

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Abstract

The invention discloses a thermistor added with titanium oxide and a preparation method thereof. The thermistor comprises the following components in percentage by weight: 10%-25% of Mn2O3, 30%-45% ofCo2O3, 15%-25% of Ni2O3, 15%-30% of Fe2O3 and 0.1%-3.0% of TiO2. The method comprises: mixing the raw materials to obtain a powder mixture, adding ethanol, an adhesive and a dispersing agent, and uniformly mixing to prepare slurry; placing the slurry in a vacuum box, absorbing the slurry on a bearing film through a guide pipe, obtaining a film with the thickness ranging from 20 micrometers to 70micrometers, annularly conveying the film, drying all layers through a drying oven, manufacturing the designed number of layers and thickness in a circulating mode, and after drying, conducting separation, cutting, glue discharging and sintering to obtain a ceramic chip; coating two sides of the sintered ceramic chip with silver electrodes; and marking into the required size according to the resistance value requirement to obtain the product. The thermistor prepared by the method has better linearity, the B value can reach 3700-3900K, the resistivity is 200-400 (kilohm.mm), and the thermistorcan be used in a wider temperature range. Due to the fact that the resistivity and the B value are moderate, temperature compensation can be achieved within a wide range, the requirement of special customers for use can be met, and high stability is achieved.

Description

technical field [0001] The invention relates to a thermistor, in particular to a thermistor added with titanium oxide and a preparation method thereof. Background technique [0002] NTC (Negative Temperature Coefficient, negative temperature coefficient) thermistors are generally sintered from transition metal oxide powders, and the existing transition metal oxide powders have many systems and formulas for their components and contents. [0003] The material characteristic constant B value of the thermistor is not only affected by the formula of the metal oxide powder, but also related to the resistivity of the thermistor. In the original technology of manganese, cobalt, nickel, and iron quaternary formula, before adding special additives, if the B value reaches 3700-3900K, the resistivity can only be 10-50 (kΩ.mm), because the resistance The rate is small and the temperature measurement range is narrow, which cannot meet the requirements of special customers. Contents of...

Claims

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Application Information

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IPC IPC(8): H01C7/04H01C17/065H01C17/28
CPCH01C7/043H01C17/06533H01C17/28
Inventor 刘刚王梅凤薛云峰唐敏高进王成
Owner JURONG BOYUAN ELECTRONICS