Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot-nanosheet-interconnected assembled composite material and preparation method thereof

A composite material and nanosheet technology, which is applied in the field of nano-fluorescent materials, can solve the problems of inability to achieve heat dissipation, thermal quenching of quantum dots, and falling off of quantum dots, and achieves improved thermal conductivity, simple preparation method, and enhanced thermal stability. Effect

Active Publication Date: 2020-03-31
HEBEI UNIV OF TECH
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method can reduce the amount of boron nitride and at the same time form the direct heat transfer from quantum dots to boron nitride; however, due to the weak adsorption force formed by static electricity, quantum dots are easy to fall off from the surface of boron nitride, so that it cannot achieve Ideal heat dissipation effect also causes thermal quenching of quantum dots

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot-nanosheet-interconnected assembled composite material and preparation method thereof
  • Quantum dot-nanosheet-interconnected assembled composite material and preparation method thereof
  • Quantum dot-nanosheet-interconnected assembled composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Example 1: CdSe / ZnS core-shell quantum dots and BN (boron nitride) nanosheet interconnected assembly composite (QDs-BN)

[0046] In the first step, BN nanosheets containing silicic acid ligands (second surface organic functional ligands) were prepared

[0047] In an air atmosphere at normal temperature and pressure, take 0.2 mmol of BN nanosheets and place them in 10 ml of ethanol, ultrasonicate for 15 minutes, add 2 mmol of methyl silicate, and stir at room temperature for 40 hours at a stirring speed of 300 rpm to obtain silicic acid ligands. About 10ml of BN nanosheet ethanol solution;

[0048] The second step is to prepare CdSe / ZnS core-shell quantum dots containing silicic acid ligands (the first surface organic functional ligands)

[0049] Under normal temperature and pressure air atmosphere, 0.5mmol of CdSe / ZnS core-shell quantum dots (wherein CdSe is the core material, in terms of molar mass; ZnS is the shell material) was dissolved in 5ml of xylene, and 4mmol ...

Embodiment 2

[0061] Example 2: An assembled composite material (QD@SiO 2 -BN)

[0062] In the first step, BN nanosheets containing silicic acid ligands (second surface organic functional ligands) were prepared

[0063] Except that methyl silicate is changed into ethyl silicate, other operation is the same as embodiment 1;

[0064] The second step is to prepare silica-wrapped CdSe / ZnS quantum dots containing silicic acid ligands (the first surface organic functional ligands) (where CdSe is the core material and ZnS is the shell material from the inside out)

[0065] Under normal temperature and pressure air atmosphere, 0.5mmol quantum dots are dissolved in 20ml ethanol, add 4mmol ethyl silicate, other operation is the same as embodiment 1;

[0066] The third step is to prepare the assembled composite material of silica-wrapped CdSe / ZnS core-shell quantum dots interconnected with BN (boron nitride) nanosheets

[0067] Except that the methyl silicate was changed to "ethyl silicate and 1ml ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a quantum dot-nanosheet -interconnected assembled composite material and a preparation method thereof. The composite material comprises quantum dots and nanosheets, wherein first organic functional ligands are attached to the surfaces of the quantum dots; second organic functional ligands are attached to the surfaces of the nanosheets; and the quantum dots are attached tothe upper surfaces and the lower surfaces of the nanosheets through the polymerization effect of the two organic functional ligands; so a quantum dot-nanosheet-interconnected assembled composite structure is formed. According to the invention, tight combination of the quantum dots and the high-thermal-conductivity nanosheets is realized, and the problem that the quantum dots are hard to be combined with the high-thermal-conductivity nanosheets is effectively solved; and the composite material improves the thermal conductivity of the quantum dots, effectively overcomes the problem of heat accumulation of the quantum dots in an excitation state, and enhances the thermal stability of the quantum dots .

Description

technical field [0001] The invention belongs to the field of nano fluorescent materials, in particular to an assembled composite material interconnected with quantum dots and nanosheets and a preparation method thereof. Background technique [0002] At present, as an emerging nano-luminescent material, quantum dots are mainly used in the field of display and lighting in the form of "quantum dot films". However, the "quantum dot film" has problems such as high manufacturing cost, high consumption of quantum dots, and low utilization rate of quantum dots. Therefore, "quantum dot on-chip packaging" equipped with traditional blue LED packaging technology has become a hot research topic due to its advantages of low manufacturing cost, less consumption of quantum dots, and high utilization of quantum dots. "Quantum dot on-chip packaging" means mixing quantum dots or composite materials containing quantum dots into LED packaging materials (such as silica gel), and then directly di...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88H01L51/50
CPCC09K11/025C09K11/883H10K50/115
Inventor 谢杨杨徐庶耿翀张璐璐杨东东
Owner HEBEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com