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UiO-66(NH2)-silver sulfide composite material and preparation process thereof

A composite material and preparation technology, applied in the field of composite materials, can solve the problems of chemical stability, detection limit and poor linear range, etc., and achieve the effect of improving chemical stability, good volatility, and improving purity

Active Publication Date: 2020-04-07
DONGGUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] But the prior art UIO-66-NH 2 , when applied to photoelectric detection, its chemical stability, detection limit and linear range are poor, so it needs to be further modified

Method used

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  • UiO-66(NH2)-silver sulfide composite material and preparation process thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0023] Embodiment 1: synthetic UiO-66 (NH 2 )-The preparation technology of silver sulfide composite material, concrete steps are,

[0024] S1: Synthesis of UiO-66(NH 2 ), specifically, a. Using a solvothermal reaction method, ultrasonically dissolve zirconium tetrachloride and 2-aminoterephthalic acid in a DMF solution, transfer to a reaction kettle, and react at 120° C. for 24 hours; b. The pale yellow product obtained after the reaction in the reactor in a was centrifuged, washed 3 times with washing solvent, dried in vacuum at 80°C, and left to stand to obtain UiO-66 (NH 2 ) solid powder.

[0025] S2: A layer of UiO-66(NH 2 ), specifically, a, cutting the FTO glass into flakes, ultrasonic cleaning in absolute ethanol and deionized water for 3 minutes successively, b, drying the flake FTO glass after cleaning in step a with nitrogen, taking 2.5 mg mL -1 UiO-66 (NH 2 ) evenly drop on the surface of FTO glass, and let it dry naturally at room temperature.

[0026] S3: ...

Embodiment 2

[0027] Embodiment 2: UiO-66 (NH 2 )-silver sulfide composite

[0028] Using the technique in Example 1, UiO-66(NH 2 )-silver sulfide composite.

[0029]For the prepared UiO-66(NH 2 )-Silver sulfide test its SEM image, the results are as follows figure 1 shown. From figure 1 It can be seen that the synthesized UiO-66(NH 2 )-silver sulfide has a narrow band gap, and the semiconductor material that can utilize the narrow band gap also has good absorbance in the visible light region, so as to avoid the inactivation of biomolecules caused by ultraviolet light.

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Abstract

The invention relates to the field of composite materials, in particular to a UiO-66(NH2)-silver sulfide composite material and a preparation process thereof. The preparation process of the UiO-66(NH2)-silver sulfide composite material is characterized by including the steps of: S1, synthesizing UiO-66(NH2); S2, modifying FTO glass with a layer of UiO-66(NH2); and S3, growing Ag2S on the surface of the UiO-66(NH2) compound so as to obtain the UiO-66(NH2)-silver sulfide composite material. The preparation process provided by the invention is simple, low in preparation cost, and has good chemical stability, low detection limit and wide linear range.

Description

technical field [0001] The invention relates to the field of composite materials, in particular to UiO-66(NH 2 )-silver sulfide composite material and its preparation process. Background technique [0002] Metal-organic frameworks (MOFs) represent a new class of microporous materials formed by networks of transition metal ions linked by organic ligands. Due to the properties of high surface area, high porosity, and tunability, MOFs are considered as potential candidates for gas storage, absorption, microelectronics, and catalysis. [0003] In the family of MOFs, Zr-based UIO-66-NH 2 As a common Zr-based MOF, it has been widely studied due to its good thermal stability, large surface area and good photocatalytic performance, and has been used in various occasions such as photocatalysts, organic pollutant removal agents, and photoelectric detection of tumor markers. [0004] But the prior art UIO-66-NH 2 , when applied to photoelectric detection, its chemical stability, de...

Claims

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Application Information

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IPC IPC(8): C08L87/00C08K3/30
CPCC08K3/30C08K2003/3009C08K2201/011C08L87/00
Inventor 程发良宾倩韵张敏谢永泽谢世磊柳鹏王寿山谢东
Owner DONGGUAN UNIV OF TECH
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