Oxidation, sintering and film-coating integrated device for producing high-purity dumet wire coatings

Abstract

The invention discloses an oxidation, sintering and film-coating integrated device for producing high-purity dumet wire coatings. The oxidation, sintering and film-coating integrated device includes acleaning port, a Cu2O coating production screen, a guide wire constant-speed wheel, a wire dividing wheel, an upper electrode guide wheel, an integrated mixed gas reaction and sintering chamber, a lower electrode guide wheel, a PVA solution infiltration tank, a wind heating system and a synchronous constant-speed take-up wheel. A novel system provided by the invention produces 100% cuprous oxideon the surface of dumet wires at a rapid speed while saving energy and sinters the surface of the dumet wires in the same chamber immediately without the condition of generating copper oxide factors;the surface of the dumet wires is seamlessly coated with a PVA anti-oxidation film coating and immediately dried by a hot air source; and the quality of the dumet wires is improved.

Description

technical field [0001] The invention belongs to the field of sealing and manufacturing of semiconductors, electric vacuum devices, and lighting equipment, and relates to nanometer ultra-high-purity Cu for sealing electric light source semiconducting seals, electric vacuum devices, and lighting equipment 2 The manufacture of O Dumet silk material specifically relates to an oxidation, sintering and film-coating integrated device for producing a high-purity Dumet silk coating layer. Background technique [0002] The red, white, yellow, and boron-free Dumet wires commonly used in the market are used to generate Cu 2 O process is in H 2 Or in the liquefied petroleum gas environment, it is made by ordinary power frequency heating to 850-1400 ° C, coated or not coated, and then sintered. This slow heating generates Cu 2 Coating or non-coating after O coating and re-sintering process generally separates the oxidation furnace for generating cuprous oxide from the surface coating of...

AI Technical Summary

Problems solved by technology

[0002] The red, white, yellow, and boron-free Dumet wires commonly used in the market are used to generate Cu 2 O process is in H 2 Or in the liquefied petroleum gas environment, it is made by ordinary power frequency heating to 850-1400 ° C, coated or not coated, and then sintered. This slow heating generates Cu 2 Coating or non-coating after O coating and re-sintering process generally separates the oxidation furnace for generating cuprous oxide from the surface coating of Dumet wire and the sintering furnace for the sintering process after generating cuprous oxide. The disadvantage of this process is that Good production of cuprous oxide from the oxidation furnace is due to the fact that the surface temperature of the wire material is moved above 400°C in the gap between the wire and the sintering furnace. In this process, it is actually impossible to ensure that 100% of the surface coating layer of Dumet wire is produced. Copper, or, the surface of Dumet wire has more or less small cracks under the microscope, because when it is in contact with air for a short time without sintering, the surface of Dumet wire will become oxidized copper conditionally The proportional factor of the sintering furnace, and the sintering process of the sintering furnace did not carry out seamless coating of PVA anti-oxidation film coating and drying with hot air source. It affects the 100% compactness and special storage conditions of the finished Dumet silk when it is used as semiconductor and lighting glass sealing, which leads to the increase of unstable factors in the quality of downstream products and reduces the overall economic benefits of the society

At the same time, this method of producing Dumet silk is to place the hollow quartz glass tube in the high-temperature atmosphere of the heating furnace, and the application causes the formation of Cu 2 The gas of O will shorten the service life of the hollow quartz glass tube. Generally, it will be scrapped after being used for no more than 170 hours. Therefore, the production cost and quality control become the bottleneck for the product to occupy the market share.

[0003] Therefore, for the existing Dumet silk production process on the market, there are still the following problems that need to be improved: 1. There are harmful oxides and dirt on the surface of the silk surface by chemical cleaning, and there is secondary pollution to the environment after washing with running water; 2. Oxidation of single-type split-type liquefied petroleum gas, industrial frequency electric furnace, high-frequency induction, microwave source and other heating sources to generate Cu 2 After the O method, the gap transitions to the sintering furnace for sintering. This gap process makes Cu 2 Copper oxide exists on the surface of the silk after O, which affects the nano-scale Cu on the surface of the silk. 2 O purity and bonding strength directly lead to shortened service life of downstream products; 3, Cu sintered by the original process 2 The O wrapping layer is easy to fall off and crack during subsequent use by the user. The surface of Dumet silk has more or less fine cracks under the microscope, and there is still a certain storage and storage period. The product inventory cycle is long, and the finished Dumet silk The risk of wire scrap rate increases; 4, the production of high-purity nano-scale surface coating layer Cu 2 O Dumet's method is to place the hollow quartz glass tube in the high-temperature atmosphere of the heating furnace, and apply it to cause the formation of Cu 2 The gas of O will shorten the service life of the hollow quartz glass tube. Generally, it will be scrapped after being used for no more than 170 hours. Therefore, the production cost and quality control become the bottleneck for the product to occupy the market share.

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