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Method for reducing triangular defects in SiC epitaxial layer

A triangular, epitaxial layer technology, applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of increased leakage, drop in breakdown voltage of SiC power electronic devices, etc., to improve defect-free area, reduce density and triangular Effect of defect size

Active Publication Date: 2020-04-17
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is widely recognized in the industry that triangle defects and carrot defects will lead to a decrease in the breakdown voltage and an increase in leakage of SiC power electronic devices

Method used

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  • Method for reducing triangular defects in SiC epitaxial layer
  • Method for reducing triangular defects in SiC epitaxial layer
  • Method for reducing triangular defects in SiC epitaxial layer

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Embodiment 1

[0037]This embodiment provides a method for reducing the size of triangular defects in the SiC epitaxial layer in the SiC chemical vapor deposition epitaxy system. The SiC chemical vapor deposition epitaxy system used in this embodiment is a horizontal hot wall epitaxy furnace. The method of this embodiment Specifically include the following steps:

[0038] Step 1, select a silicon carbide substrate with a silicon surface that is 4° to the direction, and place the substrate on a graphite base in the reaction chamber of the SiC epitaxy system;

[0039] Step 2, using argon to replace the gas in the reaction chamber 3 times, and introducing hydrogen gas into the reaction chamber (H 2 ), gradually increase the hydrogen flow rate to 100L / min, choose hydrogen as the flotation gas to drive the graphite base to rotate, the hydrogen flow rate is 1000 mL / min, set the reaction chamber pressure to 100 mbar, and gradually raise the temperature of the reaction chamber to the growth tempera...

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Abstract

The invention discloses a method for reducing triangular defects in a SiC epitaxial layer. A chemical vapor deposition growth technology is used as a basis, and a composite buffer layer is designed. Firstly, a chlorine-based silicon source is combined with a low gas inlet end carbon-silicon ratio to grow a first buffer layer to reduce the probability of converting screw dislocation into a triangle; and then, the buffer layer with the step bunching morphology is grown at the same temperature by adopting silane to reduce the expansion of the triangular defects along the (1-100) direction. The density of the triangular defects and the sizes of the triangular defects in the SiC epitaxial layer are effectively reduced by the method without changing key process parameters, and the defect-free area of the epitaxial wafer is increased. The process is compatible with the conventional SiC epitaxial process and has relatively high popularization value.

Description

technical field [0001] The invention proposes a method for reducing triangular defects in SiC epitaxial layers, which belongs to the technical field of semiconductor materials. Background technique [0002] Silicon carbide (SiC) is an excellent material for high frequency, high power and high temperature power devices. Compared with traditional silicon materials, it has 10 times the breakdown field strength, 3 times the thermal conductivity, and 3 times the forbidden band width. The design structure of SiC devices is mainly realized by homoepitaxial growth. At present, SiC homoepitaxial growth is mainly performed on off-axis SiC substrates by chemical vapor deposition (CVD). In recent years, the preparation technology of SiC substrate has developed rapidly. For example, the density of micropipes with high-risk structural defects has dropped to 0.1 cm -2 However, there are still a large number of crystal defects in SiC substrates, such as screw dislocations (TSD), edge dis...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02433H01L21/02378H01L21/02658H01L21/02502H01L21/02447H01L21/02529H01L21/0262
Inventor 李赟李忠辉赵志飞王翼周平
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD