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Multi-color LED epitaxial chip with high drop step structure and preparation method thereof

A technology with high drop and steps, applied in the field of multi-color LED epitaxial chips and its preparation, can solve the problems of poor crystal quality, difficulty in effective growth, low degree of activation of ammonia gas, etc., and achieve the effect of improving efficiency and reducing costs

Active Publication Date: 2022-03-18
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the temperature has a particularly great influence on the growth process. Under the low-temperature growth environment, the activation degree of ammonia gas is low, and it is difficult to grow effectively, and the quality of the obtained crystals is poor.
In a high-temperature growth environment, the N equilibrium pressure of InN is much higher than that of GaN, which makes it difficult for GaN materials and InN materials to dissolve effectively, and it is easy to cause serious In component segregation in InGaN films with high In components.

Method used

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  • Multi-color LED epitaxial chip with high drop step structure and preparation method thereof
  • Multi-color LED epitaxial chip with high drop step structure and preparation method thereof
  • Multi-color LED epitaxial chip with high drop step structure and preparation method thereof

Examples

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Embodiment 1

[0040] The method for preparing two-color LED epitaxial wafers by using a high-drop step structure to control the composition of indium gallium materials, the steps include:

[0041] Step 1, select (0001) plane sapphire as the substrate.

[0042] Step 2, cleaning the sapphire substrate: place the sapphire substrate in acetone, absolute ethanol, and water in sequence, and ultrasonically clean it for 20 minutes with an ultrasonic power of about 600W to remove organic impurities on the crystal surface, and finally dry it in a vacuum drying oven to obtain a clean substrate.

[0043] In step 3, a silicon oxide dielectric layer with a thickness of 400 nm is grown on the sapphire substrate by PECVD technology.

[0044]Step 4. Spin-coat photoresist on the substrate above. The photoresist is reversed adhesive AZ5214. The spin-coating speed is 600rpm / 8000rpm, the time is 10s / 40s, and the pre-baking is performed on a hot plate at 90°C for 1 minute. Due to the use of reverse glue, a two...

Embodiment example 2

[0053] The method for preparing three-color LED epitaxial wafers by using a high-drop step structure to control the composition of indium gallium materials, the steps include:

[0054] Step 1, such as figure 1 As shown, the (0001) plane sapphire was selected as the substrate.

[0055] Step 2, cleaning the sapphire substrate: place the sapphire substrate in acetone, absolute ethanol, and water in sequence, and ultrasonically clean it for 20 minutes with an ultrasonic power of about 600W to remove organic impurities on the crystal surface, and finally dry it in a vacuum drying oven to obtain a clean substrate.

[0056] Step 3, using PECVD technology to grow a 300nm thick silicon oxide dielectric layer on the sapphire substrate.

[0057] Step 4. Spin-coat photoresist on the substrate above. The photoresist is reversed adhesive AZ5214. The spin-coating speed is 600rpm / 8000rpm, the time is 10s / 40s, and the pre-baking is performed on a hot plate at 90°C for 1 minute. Due to the u...

Embodiment example 3

[0072] The method for preparing four-color LED epitaxial wafers by using a high-drop stepped structure to control the composition of indium gallium materials includes:

[0073] Step 1, select (0001) plane sapphire as the substrate.

[0074] Step 2, cleaning the sapphire substrate: place the sapphire substrate in acetone, absolute ethanol, and water in sequence, and ultrasonically clean it for 20 minutes with an ultrasonic power of about 600W to remove organic impurities on the crystal surface, and finally dry it in a vacuum drying oven to obtain a clean substrate.

[0075] Step 3, using PECVD technology to grow a 300nm thick silicon oxide dielectric layer on the sapphire substrate.

[0076] Step 4. Spin-coat photoresist on the substrate above. The photoresist is reversed adhesive AZ5214. The spin-coating speed is 600rpm / 8000rpm, the time is 10s / 40s, and the pre-baking is performed on a hot plate at 90°C for 1 minute. Due to the use of reverse glue, a two-step exposure method...

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Abstract

The invention discloses a multi-color LED epitaxial chip with a high drop step structure, which includes a substrate layer, and is characterized in that: at least one layer of step structure is formed on the substrate layer, and the step difference between the step and the surface of the substrate layer is ≥ 5 μm. The drop between the steps of each layer is ≥5μm, and a GaN buffer layer and an InGaN multi-quantum well structure are sequentially grown on the substrate layer containing the stepped structure to form a multi-color LED epitaxial chip. And discloses its preparation method. The present invention utilizes ultraviolet exposure, etching and other techniques to prepare the sapphire height difference, and when the sapphire is grown epitaxially in MOCVD or MBE furnaces, the height difference will cause a large temperature difference on the surface, thereby regulating the indium gallium components in different regions. The method can effectively obtain different light-emitting wavelength regions on the same epitaxial wafer, thereby realizing two-color or even multi-color LED chips, and the method can realize full-color high-definition display chips with low cost and high stability.

Description

technical field [0001] The invention relates to a multi-color LED epitaxial chip with a high drop step structure and a preparation method thereof. Background technique [0002] Most of the traditional full-color LED chips use blue-light gallium nitride LED devices to excite phosphors and quantum dots. Phosphors and quantum dots mainly rely on absorbing blue light to excite and radiate light. Patent CN10112172A proposes a full-color micro-LED chip based on GaN nanohole array / quantum dot hybrid structure. However, this kind of luminous color rendering index is low and the correlated color temperature is high. Technically, two or more times The color scheme makes the process complex and unreliable, especially when the device size is reduced to micro-LEDs below 100 μm, the precise positioning of quantum dots or phosphors will deteriorate, and the device yield will decrease. [0003] At present, some researchers have proposed multiple micro-LEDs to emit light in parallel to repl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/06H01L33/12H01L33/32H01L33/14H01L33/00
CPCH01L33/20H01L33/06H01L33/12H01L33/32H01L33/14H01L33/0075
Inventor 智婷陶志阔薛俊俊
Owner NANJING UNIV OF POSTS & TELECOMM