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Ultraviolet photoelectric device and preparation method thereof

A technology of electrical devices and ultraviolet light, applied in photovoltaic power generation, electrical components, semiconductor devices, etc., can solve the problems of low hole transport efficiency and strong ultraviolet absorption

Active Publication Date: 2020-04-24
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an ultraviolet photoelectric device and its preparation method, aiming to solve the problems of low hole transport efficiency and strong ultraviolet absorption in the existing p-type preparation technology of ultraviolet photoelectric devices

Method used

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  • Ultraviolet photoelectric device and preparation method thereof
  • Ultraviolet photoelectric device and preparation method thereof
  • Ultraviolet photoelectric device and preparation method thereof

Examples

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no. 1 example

[0033] see figure 1 with figure 2 , the present embodiment provides an ultraviolet optoelectronic device 100, the ultraviolet optoelectronic device 100 includes a substrate 110 and a substrate 120 sequentially grown on the substrate 110, an n-type AlGaN layer 130, an active region 140, a p-type AlGaN layer 150 and contact layer 160. Wherein, the p-type AlGaN layer 150 includes a first body 170 and a first step 180 located on the top surface of the first body 170, a plurality of first steps 180 are periodically arranged in sequence, and the vertical height of the first step 180 is Straight section is triangular.

[0034] The drop distance L between two adjacent first steps 180 is greater than the thickness of the monoatomic layer. The drop distance L between two adjacent first steps 180 refers to the distance between the top surfaces of two adjacent first steps 180 , and of course the top surfaces of two adjacent first steps 180 are parallel to each other. It can also be s...

no. 2 example

[0044] see image 3 , this embodiment provides a method for manufacturing the ultraviolet photoelectric device 100, which is mainly used for preparing the ultraviolet photoelectric device 100 in the first embodiment. The preparation method includes sequentially growing a substrate 120, an n-type AlGaN layer 130, an active region 140 and a p-type AlGaN layer 150 on a substrate 110; wherein the p-type AlGaN layer 150 includes a first body 170 and is located at the second For the first steps 180 on the top surface of a body 170 , the drop distance L between two adjacent first steps 180 is greater than the thickness of a monoatomic layer.

[0045] Specifically, the following steps are included:

[0046] S1: providing a substrate 110 .

[0047] The material of the substrate 110 is sapphire, and the substrate 110 is placed in the reaction chamber of the growth equipment. The growth equipment can be any one of metal-organic chemical vapor deposition, hydride vapor deposition, and m...

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Abstract

The invention provides an ultraviolet photoelectric device and a preparation method thereof, and relates to the technical field of semiconductors. The ultraviolet photoelectric device comprises a substrate, a base plate, an n-type AlGaN layer, an active region and a p-type AlGaN layer, wherein the base plate, the n-type AlGaN layer, the active region and the p-type AlGaN layer sequentially grow onthe substrate. The p-type AlGaN layer comprises a first body and first steps located on the top face of the first body, and the fall distance L between every two adjacent first steps is larger than the thickness of a monatomic layer. According to the ultraviolet photoelectric device and the preparation method thereof, a plurality of single atoms can be piled up in the fall direction of two adjacent first steps, and a step coalescence effect is formed on the p-type AlGaN layer; the hole transport efficiency is improved; the ultraviolet absorption is weakened; and the photoelectric conversion efficiency of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an ultraviolet photoelectric device and a preparation method thereof. Background technique [0002] Aluminum-gallium-nitride (AlGaN)-based ultraviolet optoelectronic devices have important application value in the fields of industrial curing, sterilization, non-line-of-sight communication, toxic gas detection, space charge processing, high-density data storage, and missile detection. However, the photoelectric conversion efficiency of current ultraviolet photoelectric devices is still very low, which is difficult to meet the application requirements of high-end products. In addition to the problem of material defects, the hole transport efficiency of AlGaN with high Al composition is low, which is another major problem faced by ultraviolet optoelectronic devices. The lower hole transport efficiency of AlGaN with high Al composition is due to the rapid decrease in the inco...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/0352H01L31/103H01L31/18
CPCH01L31/02363H01L31/0352H01L31/1035H01L31/1848Y02E10/544Y02P70/50
Inventor 何晨光赵维吴华龙陈志涛张康贺龙飞刘云洲廖乾光
Owner GUANGDONG INST OF SEMICON IND TECH
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