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Epitaxial structure and preparation method of deep ultraviolet multi-quantum well semiconductor laser

A multi-quantum well and epitaxial structure technology, which is applied in the field of epitaxial structure growth and preparation of deep ultraviolet multi-quantum well semiconductor lasers, can solve the problems of unfavorable product progress and development, large laser volume and high cost, and achieve high photoelectric conversion efficiency , high growth quality and precise component control

Active Publication Date: 2021-05-18
HAINAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, no deep ultraviolet semiconductor laser structure with a wavelength of 210nm has appeared
The deep ultraviolet semiconductor laser that is not a semiconductor is bulky, bulky, and expensive, which is not conducive to the progress and development of related applications and products

Method used

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  • Epitaxial structure and preparation method of deep ultraviolet multi-quantum well semiconductor laser
  • Epitaxial structure and preparation method of deep ultraviolet multi-quantum well semiconductor laser
  • Epitaxial structure and preparation method of deep ultraviolet multi-quantum well semiconductor laser

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Embodiment 1

[0058] Epitaxial structure of deep ultraviolet multi-quantum well semiconductor laser: including a thickness of doping concentration 3E18cm -3 , an N-type single crystal substrate 2 with a thickness of 660 μm; an N-type transition layer 3 (thickness is 300 nm, Al x N y x / y=1-0.45 in the material, the value of x / y decreases with increasing thickness), N-type lower confinement layer 4 (thickness is 1.6 μm, Al x N y x / y=0.40 in the material), the lower waveguide layer 5 (thickness is 0.15μm, Al x N y x / y=0.55-0.7 in the material, and the x / y value increases with thickness), lower barrier layer 6 (thickness is 10nm, Al x N y x / y=0.85 in the material), multi-quantum well layer 7 (3 single quantum well layers, 2 barrier layers, a barrier layer is sandwiched between every two single quantum well layers, and the thickness of the single quantum well layer is 6.5nm, x / y=0.1, barrier layer thickness is 8nm, x / y=0.85), upper barrier layer 8 (thickness is 10nm, Al x N y x / y=0.85 in...

Embodiment 2

[0077] Epitaxial structure of deep ultraviolet multi-quantum well semiconductor laser: including a thickness of doping concentration 3E18cm -3 An N-type single crystal Si substrate 2 with a thickness of 640 μm; an N-type transition layer 3 (thickness is 500 nm, Al x N y x / y=1-0.40 in the material, the value of x / y gradually decreases with thickness), N-type lower confinement layer 4 (thickness is 2 μm, Al x N y x / y=0.40 in the material), the lower waveguide layer 5 (thickness is 0.25μm, Al x N y x / y=0.55-0.68 in the material, the x / y value increases uniformly with the thickness), the lower barrier layer 6 (thickness is 10nm, Al x N y x / y=0.83 in the material), multi-quantum well layer 7 (3 quantum well layers, thickness is 7nm, x / y=0.95, barrier layer is sandwiched between adjacent quantum well layers, barrier layer thickness is 8nm, x / y=0.85), upper barrier layer 8 (thickness is 10nm, Alx N y x / y=0.83 in the material), upper waveguide layer 9 (thickness is 0.25μm, Al ...

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Abstract

The invention discloses an epitaxial structure of a deep ultraviolet multi-quantum well semiconductor laser, comprising: a substrate, the substrate is a single crystal N-type substrate; an N-type transition layer, N Type lower confinement layer, lower waveguide layer, lower barrier layer, multiple quantum well layer, upper barrier layer, upper waveguide layer, P-type upper confinement layer and P-type heavily doped layer; in the P-type heavily doped layer A P-face electrode prepared on the upper surface; and an N-face electrode prepared on the lower surface of the N-type substrate. The structure in the present invention enables the semiconductor laser to have a certain output power, so that the semiconductor laser has higher brightness.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, and more specifically relates to an epitaxial structure growth of a deep ultraviolet multi-quantum well semiconductor laser and a preparation method thereof. Background technique [0002] The deep ultraviolet semiconductor laser structure is suitable for scientific research, industry, and OEM system integration development. In terms of scientific research, ultraviolet lasers can be used for atomic / analytical spectroscopy, chemical kinetics and other research. In industry, the data storage disk space of disks produced based on UV lasers is 20 times higher than that of blue lasers. In the future, deep ultraviolet laser technology will lead to the development of a new generation of nanotechnology, materials science, biotechnology, chemical analysis, plasma physics and other disciplines. [0003] At present, AlN (aluminum nitride) is the semiconductor material with the widest ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343
CPCH01S5/343H01S2304/04
Inventor 乔忠良赵志斌李再金任永学李林曲轶
Owner HAINAN NORMAL UNIV
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