Organic bentonite modified high-strength high-heat-resistance epoxy molding compound for semiconductor packaging and preparation method thereof
An epoxy molding compound, semiconductor technology, applied in the directions of epoxy resin glue, non-polymer adhesive additives, adhesive types, etc., can solve problems such as high cost, and achieve low cost, high reliability, and motion resistance. intensified effect
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Embodiment 1
[0087] See Table 1 for the composition of the raw material formulation of the high-strength, high-heat-resistant epoxy molding compound for organic bentonite modified semiconductor packaging in Example 1.
[0088] In this embodiment, the method for preparing organic bentonite modified semiconductor packaging with high strength and high heat-resistant epoxy molding compound is as follows:
[0089] (1) Melt 127.5g of epoxy resin SQCN 700-3 and 15g of modified organic nano-bentonite at a high temperature of 130°C, fully stir for 30min, mix well, cool, pulverize, and sieve for use.
[0090] (2) 71.25g epoxy resin and modified organic nano-bentonite mixture, 24g phenolic resin PF 8010, 2.25g ion trapping agent DHT-4C, 1.5g low stress modifier SF-8241EG, 2.25g coupling agent KH560, 1.5g accelerator 2-ethyl-4 methylimidazole, 645g fused silica, 0.75g release agent carnauba wax and 1.5g colorant carbon black were put into a high-speed mixer and mixed for 5min, and the epoxy molding co...
Embodiment 2
[0093] See Table 1 for the raw material formulation composition of the organobentonite-modified semiconductor packaging high-strength and high-heat-resistant epoxy molding compound in Example 2.
[0094] In this embodiment, the method for preparing organic bentonite modified semiconductor packaging with high strength and high heat-resistant epoxy molding compound is as follows:
[0095] (1) Melt 135g of epoxy resin SQCN 700-3 and 120g of modified organic nano-bentonite at a high temperature of 180°C, fully stir for 90min, mix well, cool, pulverize, and sieve for use.
[0096] (2) 127.5g epoxy resin and modified organic nano-bentonite mixture, 28.5g phenolic resin PF 8010, 0.75g ion trapping agent DHT-4C, 3.75g low stress modifier SF-8241EG, 3.75g coupling agent KH560 , 0.75g accelerator 2-ethyl-4 methylimidazole, 577.5g fused silica, 6g release agent carnauba wax, and 1.5g coloring agent carbon black were dropped into a high-speed mixer and mixed for 5min, and the discharge ob...
Embodiment 3
[0099] See Table 1 for the composition of raw materials of the high-strength, high-heat-resistant epoxy molding compound for organic bentonite modified semiconductor packaging in Example 3.
[0100] In this embodiment, the method for preparing organic bentonite modified semiconductor packaging with high strength and high heat-resistant epoxy molding compound is as follows:
[0101] (1) Melt 150g of epoxy resin SQCN 700-3 and 90g of modified organic nano-bentonite at a high temperature of 160°C, fully stir for 60min, mix well, cool, pulverize, and sieve for use.
[0102] (2) 120g epoxy resin and modified organic nano-bentonite mixture, 24.75g phenolic resin PF 8010, 0.75g ion trapping agent DHT-4C, 3g low stress modifier SF-8241EG, 1.88g coupling agent KH560, 1.12 g accelerator 2-ethyl-4 methylimidazole, 592.5g fused silica, 3g release agent carnauba wax, and 3g colorant carbon black were put into a high-speed mixer and mixed for 5 minutes, and the epoxy molding compound mixtur...
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