Fluorine-containing water-soluble polymer material for producing top anti-reflection film in photoetching process

A water-soluble polymer and molecular weight technology, applied in the field of photoresist, can solve the problems of poor water solubility and inconvenient combination at the same time, and achieve the effects of improving the yield rate of photolithography, reducing interference, and high transmittance

Inactive Publication Date: 2020-05-19
GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to propose a fluorine-containing water-soluble polymer material for the production of top anti-reflection film in the photolithography process in view of the technical problems that the existing polymer materials for the production of fluorine-containing polymers do not contain fluorine and have poor water solubility and are inconvenient to synthesize. Sexual polymer material

Method used

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  • Fluorine-containing water-soluble polymer material for producing top anti-reflection film in photoetching process
  • Fluorine-containing water-soluble polymer material for producing top anti-reflection film in photoetching process
  • Fluorine-containing water-soluble polymer material for producing top anti-reflection film in photoetching process

Examples

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Comparison scheme
Effect test

Embodiment 1

[0025] Step 1: Dissolve 2.9g of fluorine-containing water-soluble polymer material with Mw=2600 in water at 30-50°C, stir for 2-8 hours, and prepare a clear and transparent solution with a concentration of 4%.

[0026] Step 2: Gradually add a certain amount of perfluoro linear carboxylic acid to the prepared clear and transparent solution, heat and reflux under reduced pressure for 6 hours, continue to add perfluoro linear carboxylic acid during the reflux process, and adjust the pH of the solution to 4 at the same time; Pure water to adjust the solute solid content in the solution to 3%; then adjust the fluorine content to 30% of the solute in the solution.

[0027] Step 3: Add a certain amount of organic amine tetramethylammonium hydroxide and aspartic acid solution, the solution concentration should be 4%, to adjust the pH of the solution to 2-3, and obtain a clear and transparent solution at the same time, so as to complete the overall fluorine content adjustment.

Embodiment 2

[0029] Step 1: Dissolve 2.9g of fluorine-containing water-soluble polymer material with Mw=2600 in water at 30-50°C, stir for 2-8 hours, and prepare a clear and transparent solution with a concentration of 4%.

[0030] Step 2: Gradually add a certain amount of sulfonic acid to the prepared clear and transparent solution, heat and reflux under reduced pressure for 6 hours, continue to add sulfonic acid during the reflux process, and adjust the pH of the solution to 4 at the same time; at the same time, add ultrapure water to adjust the solute in the solution The solid content is 3%; then adjust the fluorine content to 30% of the solution solute.

[0031] Step 3: Add a certain amount of organic amine tetramethyl hydroxide and aspartic acid solution, the solution concentration should be 4%, to adjust the pH of the solution to 2-3, and obtain a clear and transparent solution at the same time, so as to complete the adjustment of the overall fluorine content Adjustment.

Embodiment 3

[0033] Step 1: Dissolve 2.9g of fluorine-containing water-soluble polymer material with Mw=2600 in water at 30-50°C, stir for 2-8 hours, and prepare a clear and transparent solution with a concentration of 4%.

[0034] Step 2: Gradually add a certain amount of perfluoropolyether carboxylic acid to the prepared clear and transparent solution, heat and reflux under reduced pressure for 6 hours, continue to add perfluoropolyether carboxylic acid during the reflux process, and adjust the pH of the solution to 4 at the same time; Pure water to adjust the solute solid content in the solution to 3%; then adjust the fluorine content to 30% of the solute in the solution.

[0035] Step 3: Add a certain amount of organic amine tributylammonium hydroxide and glutamic acid solution, the solution concentration should be 4%, to adjust the pH of the solution to 2-3, and obtain a clear and transparent solution at the same time, so as to complete the adjustment of the overall fluorine content ....

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Abstract

The invention discloses a fluorine-containing water-soluble polymer material. According to the invention, carboxyl modification is conducted on water-soluble polymer resin; a main chain of the water-soluble polymer resin is polyacrylic acid which is as described in the specification, and a carboxyl group of a branched chain is changed into -COOR<f>, wherein R<f> is a perfluoropolyether structuralunit or a perfluoro straight-chain structural unit; a perfluoropolyether structure is as described in the specification, wherein m in the perfluoropolyether structure is 0-9; CF<3>(CF<2>)<n> is adopted as a perfluoro straight chain structure, wherein n ranges from 1 to 6; the molecular weight M<w> of the water-soluble polyacrylic acid ranges from 1000 to 100000; and in the fluorine-containing water-soluble polymer material, the molecular weight of elemental fluorine is 1%-60% of the total molecular weight, so subsequent fluorine content adjustment and pH value adjustment can be facilitated.

Description

technical field [0001] The invention relates to the technical field of photoresist, in particular to a fluorine-containing water-soluble polymer material used in the production of a top anti-reflection film in a photolithography process. Background technique [0002] At present, photolithography is a method of transferring the semiconductor circuit pattern on the photomask to the silicon wafer. The photoreticle is irradiated by laser or electron beam, so that the photosensitive material on the wafer undergoes material property changes due to light sensitivity. Change, thereby completing the process of pattern transfer, the existing photolithography technology is the most critical process unit in the manufacture of semiconductors, flat panel displays and other devices. However, there is a technical problem of light scattering in the existing photolithography process, which will lead to low dimensional accuracy of the photoresist imaging, and the graphics cannot be processed c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F8/18C08F8/24C08F120/06G03F7/004
CPCC08F8/18C08F8/24G03F7/004C08F120/06
Inventor 李永斌钱亚飞何龙龙陈志鹏汪叔林
Owner GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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