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Palladium selenide single crystal and preparation and application thereof

A single crystal and field effect transistor technology, applied in the field of nanomaterials, can solve problems such as the difficulty of single crystal synthesis, and achieve the effects of simple operation, good shape, high crystallinity, and controllable thickness

Active Publication Date: 2020-05-29
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0031] The first object of the present invention is to provide a synthetic PdSe 2 Single-crystal approach to address few-layer PdSe 2 Difficulties in single crystal synthesis

Method used

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  • Palladium selenide single crystal and preparation and application thereof
  • Palladium selenide single crystal and preparation and application thereof
  • Palladium selenide single crystal and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0107] PdS 2 Single crystal preparation:

[0108] PdSe according to the present invention 2 Single crystal synthesis method, Se powder is placed in a porcelain boat in the upstream variable temperature zone at a temperature of 450°C, Pd powder is placed in a porcelain boat in a high temperature constant temperature zone, and the constant temperature is set at 815°C, Pd powder and Se powder The mass ratio of SiO is 1:14 (40mg:500mg), SiO 2 The / Si substrate is placed at a distance of 7 cm from the Pd powder, that is, the growth temperature is 580°C. Before heating, use a large flow rate to flush the air in the quartz tube. During the reaction process, pass Ar with a flow rate of 70 sccm into the quartz tube. When the high-temperature constant temperature zone reaches the set temperature of 815°C, keep the constant temperature for 25 minutes to let the precursor pass through Heated evaporation is transported to the substrate for reaction under the action of carrier gas. Throu...

Embodiment 2

[0114] like Figure 7 As shown, by adjusting the growth parameters to tune the PdSe 2 The thickness and shape of single crystals mainly have the following two trends.

[0115] Trend 1: when selenium powder (T Se ) and palladium powder (T Pd ) are 500°C and 815°C respectively, and the flow rate of Ar gas is 90sccm, we set the substrate temperature (T sub ) is adjusted down to 580°C, the thickness of the single crystal is relatively thin, as ( Figure 7 a). When T sub When the temperature rises to 600 °C, the thickness of most single crystals is ( Figure 7 b). When T sub When increasing to 620°C, the thickness of most single crystals increases to 20-27nm ( Figure 7 c).

[0116] Trend 2: when palladium powder (T Pd ) temperature is 815 ℃ respectively, and the flow rate of Ar gas is 90sccm; T sub When it is 580℃; adjust T Se , the result is: (1): control T Se for 450°C, such as Figure 7 d, The single crystal has a uniform regular tetragonal morphology, and ...

Embodiment 3

[0120] PdS 2 The preparation method of the field effect transistor: in the growth of PdSe 2 The electrode pattern is designed by electron beam exposure on the single crystal substrate, and then metal Cr (10nm) and Au (50nm) are deposited on the surface by thermal evaporation to obtain PdSe 2 field effect transistor. Prepared PdSe 2 Field effect transistors such as Figure 8 As shown in the inset, the scale bar is 3 μm.

[0121] The synthesized PdSe 2 Single crystals are prepared into electrical and optoelectronic devices, and through device testing, it is confirmed that PdSe 2 As a novel air-stable two-dimensional material with high mobility and high responsiveness, it can be a high-quality candidate material for next-generation optoelectronic applications.

[0122] Figure 9 a-c is PdSe 2 Electrical testing of single crystals. Figure 9 a is PdSe 2 The output curve of the field effect transistor, showing that the electrode with PdSe 2 There is good ohmic contact be...

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Abstract

The invention belongs to the technical field of single crystal preparation, and particularly discloses a synthesis method of palladium diselenide (PdSe2) single crystal. The method comprises the stepsthat Pd powder and Se powder are heated at the temperature of 810-850 DEG C and the temperature of 450-600 DEG C respectively to evaporate the Pd powder and the Se powder, the Pd powder and the Se powder are transported to the surface of a substrate to react and grow under the condition that shielding gas serves as carrier gas, and the PdSe2 single crystal is prepared, and the carrier gas flow is50-90 sccm. The synthesized PdSe2 single crystal is prepared into electrical and photoelectric devices, and tests on the devices prove that PdSe2 is a novel air-stable two-dimensional material with high mobility and high responsiveness and can be used as a high-quality candidate material for next-generation photoelectric application.

Description

technical field [0001] The invention belongs to the field of nanometer materials, and specifically relates to palladium diselenide single crystal, its preparation and its application in electrical and optoelectronic devices. [0002] technical background [0003] Since the discovery of graphene in 2004, atomic-thick two-dimensional materials have gradually become an important part of next-generation electronics and optoelectronics due to their excellent physical and chemical properties and layer number dependence. 1-9 . More recently, two-dimensional materials with atomic structures in the form of curved or curved wrinkled hexagons, such as black phosphorus 10，11 and black arsenic 12，13 , has attracted extensive attention due to its high mobility properties and in-plane anisotropic response to external stimuli. [0004] Many two-dimensional materials with curved or wrinkled pentagonal structures have been studied theoretically, but few have been studied in experiments due ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B25/00H01L29/24H01L29/772
CPCC30B25/00C30B29/46H01L29/24H01L29/772
Inventor 段曦东黎博许维婷
Owner HUNAN UNIV
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