SGT-MOSFET semiconductor device
A semiconductor, N-type semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of large driving loss and switching loss, single electric field distribution structure, and poor voltage withstand performance of devices, so as to reduce switching loss, Optimizing the electric field distribution structure and the effect of simple structure
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Embodiment 1
[0056] Such as figure 2As shown, it is a schematic diagram of the structure of this example. Compared with the traditional split gate structure, the present invention adjusts the electric field distribution in the upper part of the N-type drift region by setting a floating P well 10 at the bottom of the control gate 5. The floating P well 10 and the The N-type semiconductor drift region forms a PN junction and depletes each other. At the same time, there is a thick gate oxide layer at the bottom of the control gate, so that the large electric field cannot be concentrated, which can improve the withstand voltage of the device and reduce the on-resistance; the invention combines the shield gate and the control gate. Placed in different trenches, by increasing the conductive channel density and adopting a deep trench structure, the on-resistance of the device is significantly reduced, and to a certain extent, the resistivity of the nearby N-type drift region caused by the floatin...
Embodiment 2
[0058] Such as image 3 As shown, it is a schematic diagram of the structure of this example. Compared with the traditional split gate structure, the present invention adjusts the electric field distribution in the lower part of the N-type drift region by setting floating P wells 10 at the bottom of the shield gate 6 on both sides, and the floating P wells The well and the N-type semiconductor drift region form two PN junctions and deplete each other, which weakens the electric field at the bottom of the shield gate in the N-type semiconductor drift region, thereby improving the withstand voltage of the device; the invention places the shield gate and the control gate in different trenches In the trench, by increasing the conductive channel density and adopting a deep trench structure, the on-resistance of the device is significantly reduced.
[0059] Such as image 3 As shown, the difference between this example and Example 1 is that the floating P wells are arranged at the ...
Embodiment 3
[0061] Extended optimization design, such as Figure 4 As shown, the difference between this example and Example 1 is that the floating P wells are respectively arranged at the bottom of the control gate and the shield gate, and the two floating P wells at the bottom of the shield gate are located in the N-drift region 11, optimizing the upper N-type The electric field distribution structure of the drift region and the lower N-drift region improves the withstand voltage of the device and reduces the on-resistance.
[0062] Such as Figure 4 As shown, it is a schematic diagram of the structure of this example. Compared with the traditional split gate structure, the present invention adjusts the upper N-type drift region by setting floating P wells at the bottom of the control gate 5 and the bottom of the shield gate 6 on both sides. and the electric field distribution of the lower N-drift region, the floating P well at the bottom of the control gate forms a PN junction with th...
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