Cross-scale thin film stress test system and test method

A technology of thin film stress and testing system, applied in the direction of force measurement, measurement force, measurement device, etc. by measuring the change of optical properties of materials when they are stressed, and can solve problems such as lack of time and cost

Pending Publication Date: 2020-07-07
WUHAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Lack of an instrument that effectively saves time and cost and measures multiple parameter scales at the same time

Method used

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  • Cross-scale thin film stress test system and test method
  • Cross-scale thin film stress test system and test method
  • Cross-scale thin film stress test system and test method

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Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0029] In the embodiment of the present invention, such as figure 1 As shown, including X-ray source 1, main Soller slit 2, automatic divergence slit 3, anti-scatter light bar 4, sample box 5, receiving slit 7, secondary Soler slit 8, anti-scatter slit sealing box 9. Monochromator 10, detector slit 11, X detector 12, He-Ne laser 13, etalon 14, polarizer 15, linear array CCD 16, goniometer 17.

[0030] The incident light emitted by the He-Ne laser 13 is divided into several parallel beams by the etalon 14, and then emitted to the pattern surface, and the linear array CCD 16 receives the reflected l...

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Abstract

The invention designs a cross-scale thin film stress test system and test method. Firstly, a sample film is placed on a sample plate, helium-neon laser passes through reflected light of an uneven film, an optical signal is converted into an amplified electric signal after the helium-neon laser is received and processed by an array line CCD, the warping degree is calculated by a computer, the macroscopic stress of the film is obtained after formula derivation, and an area needing to be further measured is determined; then the local microscopic stress is continuously measured by utilizing the X-ray diffraction principle under the condition that the sample is not moved. X-rays are reflected by crystal faces to obtain a plurality of beams of diffracted rays, inter-crystal-face deformation is obtained through X-ray diffraction conditions, and stress borne by the microcrystal is obtained through calculation. By means of the technical method, time and materials for monitoring the macroscopicwarping condition and the microcosmic grain arrangement state of the thin film material can be greatly saved, and the stress state of the thin film material can be detected according to the measurement result. The invention has the advantages of simplicity and quickness in operation, time cost saving and wide application range.

Description

technical field [0001] The invention belongs to the technical field of photomechanical film stress measurement, and in particular relates to a cross-scale film stress test system and test method. Background technique [0002] Diversified thin films are widely used in scientific and technological fields such as airborne, spaceborne and aerospace fields. Its combination with microcircuits is an important branch in the field of thin films, called thin film circuits. This is a multi-layer interconnection circuit structure that uses vacuum coating, sputtering, electroplating and other film forming techniques, dry and wet etching and other forming techniques to make chips. Based on interconnection density and high line precision, thin film technology can realize small hole metallization, manufacture passive circuit integrated components, and manufacture multilayer circuits. Due to the wide range of component parameters, high precision, high integration, small size and other outs...

Claims

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Application Information

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IPC IPC(8): G01L1/24G01L1/25
CPCG01L1/24G01L1/25
Inventor 刘胜陈志文杨凡王晨阳马坤
Owner WUHAN UNIV
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