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Schottky diode for rectifying circuit and rectifying circuit

A Schottky diode and rectifier circuit technology, applied in the field of wireless transmission, can solve the problems of component packaging structure, complex interconnection, complex Schottky diode device structure, etc.

Inactive Publication Date: 2020-07-07
XIAN CREATION KEJI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, the research on how to improve the electron mobility of the Schottky diode is rare, and it is only limited to the research on improving the electron mobility by adopting a special design to the structure of the Schottky diode. The Schottky diode usually prepared by this method The structure of the base diode device is complex, and the component packaging structure and interconnection are complex

Method used

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  • Schottky diode for rectifying circuit and rectifying circuit
  • Schottky diode for rectifying circuit and rectifying circuit
  • Schottky diode for rectifying circuit and rectifying circuit

Examples

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Embodiment 1

[0025] See figure 1 , figure 1 A schematic structural diagram of a Schottky diode used in a rectifier circuit provided by an embodiment of the present invention. The Schottky diode used in the rectifier circuit includes: a substrate layer 001, a Ge layer 002, a compressive stress layer 003, a first metal electrode a1, and a second metal electrode a2, wherein,

[0026] The Ge layer 002 and the compressive stress layer 003 are sequentially stacked on the first surface of the substrate layer 001, the compressive stress layer 003 is provided with electrode holes, and the first metal electrode a1 is provided on the Ge layer 002 and disposed in the electrode hole, the second metal electrode a2 is disposed on the second surface of the substrate layer 001 opposite to the first surface.

[0027] The beneficial effects of the present invention are:

[0028] 1. The present invention designs the material of the Schottky diode, adopts the strained Ge layer as the semiconductor layer of ...

Embodiment 2

[0032] see again figure 1 , this embodiment focuses on the detailed description of the Schottky diode used in the rectifier circuit on the basis of the above embodiments. Specifically, the Schottky diode includes:

[0033] Including: a substrate layer 001, a Ge layer 002, a compressive stress layer 003, a first metal electrode a1, and a second metal electrode a2, wherein,

[0034] The Ge layer 002 and the compressive stress layer 003 are sequentially stacked on the first surface of the substrate layer 001, the compressive stress layer 003 is provided with electrode holes, and the first metal electrode a1 is provided on the Ge layer 002, the second metal electrode a2 is disposed on the second surface of the substrate layer 001 opposite to the first surface.

[0035] Wherein, the substrate layer 001 is a germanium substrate layer, specifically, the N-type doping concentration can be 10 20 cm -3 N-type single crystal germanium (Ge).

[0036] It should be noted that, as a sub...

Embodiment 3

[0067] In this embodiment, on the basis of the above-mentioned embodiments, an embodiment of the present invention provides a rectification circuit, wherein the rectification circuit includes the Schottky diode described in any one of the above-mentioned embodiments.

[0068] Because the rectifier circuit uses a Schottky diode with high electron mobility, it has high energy conversion efficiency. The rectifier circuit can be used in a wireless transmission system and can improve the energy conversion efficiency of the wireless transmission system.

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Abstract

The invention relates to a Schottky diode for a rectifying circuit and the rectifying circuit. The Schottky diode for the rectifying circuit comprises a substrate layer, a pressure stress Ge layer, asilicon nitride layer, a first metal electrode and a second metal electrode, wherein the pressure stress Ge layer and the silicon nitride layer are sequentially stacked on a first surface of the substrate layer; the silicon nitride layer is provided with an electrode hole, the first metal electrode is arranged on the pressure stress Ge layer and is arranged in the electrode hole, and the second metal electrode is arranged on a second surface, which is opposite to the first surface, of the substrate layer. According to the embodiment of the invention, the material of the Schottky diode is designed, and the strain Ge layer is used as a Schottky contact semiconductor layer, so that the Schottky diode has higher electron mobility and energy band advantages.

Description

technical field [0001] The invention belongs to the technical field of wireless transmission, and in particular relates to a Schottky diode used in a rectification circuit. Background technique [0002] The rectifier circuit is an important part of the rectenna at the receiving end of wireless transmission, and it is also the most important factor that determines the rectification efficiency of the rectenna. The most important component in the rectification circuit is the rectification diode, which is also the most important factor in determining the rectification efficiency. Commonly used rectifier diodes are Schottky diodes. Schottky diodes are made of metal-semiconductor junctions formed by metal and semiconductor contacts. They have low power consumption, high current, extremely short reverse recovery time, and low forward conduction voltage. Make it a medium and small power rectifier diode. The performance of the whole Schottky diode, that is, the Schottky diode in th...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/16H01L21/329
CPCH01L29/16H01L29/66143H01L29/872
Inventor 李薇李雯
Owner XIAN CREATION KEJI CO LTD
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