Polishing solution and preparation method thereof

A technology of polishing liquid and concentrated liquid, which is applied in the direction of polishing compositions containing abrasives, etc., and can solve the problems of low polishing rate and poor versatility of the polishing liquid

Inactive Publication Date: 2020-07-17
深圳市朗纳研磨材料有限公司
View PDF13 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In view of the above problems, the present invention provides a polishing liquid and a preparation method thereof, aiming to

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing solution and preparation method thereof
  • Polishing solution and preparation method thereof
  • Polishing solution and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0086] The present invention also provides a kind of preparation method of polishing liquid, it comprises the following steps:

[0087] provide abrasives;

[0088] adding water to the abrasive, and dispersing for 20-50 minutes to obtain the abrasive concentrate; and

[0089] Dilute the abrasive concentrate with water, add an oxidizing agent, a lubricant, and a chelating agent to the diluted abrasive concentrate, and disperse for 20-50 minutes to prepare the polishing liquid.

[0090] In some embodiments, the water is ultrapure water.

[0091] In some embodiments, water is added to the abrasive, and it is subjected to a first dispersion treatment to obtain a highly dispersed abrasive concentrate. In the above-mentioned first dispersion treatment, the soft agglomeration among the abrasive particles can be eliminated, and the morphology of the abrasive is also modified simultaneously to reduce the possibility of scratching the surface of the substrate during the polishing proce...

Embodiment 1

[0104] Embodiment one (does not contain abrasive):

[0105] Provide raw materials: ultrapure water 4622.5g, EFKA series dispersant 25g, sodium hypochlorite 250g, dipropylene glycol 100g, sodium lauryl sulfate 0.5g, cocamidopropyl betaine 0.5g, benzotriazole 0.5 g, 0.5 g of butyl iodopropynyl carbamate, and 0.5 g of hydrochloric acid.

[0106] Preparation method: add EFKA series dispersant, sodium hypochlorite, dipropylene glycol, sodium lauryl sulfate, cocamidopropyl betaine, benzotriazole, iodopropyl to ultrapure water under stirring condition Alkyne butyl carbamate, and adding hydrochloric acid to adjust the pH to 11.5, to obtain a polishing solution suitable for III-V semiconductor materials. Stirring time is 20min.

Embodiment 2

[0108] Provide raw materials: 500g of alumina powder with a particle size of 50nm, 4122.5g of ultrapure water, 25g of EFKA series dispersants, 250g of sodium hypochlorite, 100g of dipropylene glycol, 0.5g of sodium lauryl sulfate, cocoamidopropyl Betaine 0.5g, benzotriazole 0.5g, iodopropynyl butyl carbamate 0.5g, hydrochloric acid 0.5g.

[0109] Preparation:

[0110] Add 1000g ultrapure water and EFKA series dispersants to the alumina powder, and disperse for 40min with a planetary ball mill disperser to obtain the abrasive concentrate;

[0111] Mix the abrasive concentrate with 3122.5g of ultrapure water, add sodium hypochlorite, dipropylene glycol, sodium lauryl sulfate, cocamidopropyl betaine, benzotriazole, iodopropyne under ultrasonic stirring conditions Butyl carbamate was used to adjust the pH to 11.5 with hydrochloric acid to obtain polishing liquid II suitable for III-V semiconductor materials. The ultrasonic stirring time is 20min.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Particle sizeaaaaaaaaaa
Particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides a polishing solution and a preparation method thereof. The polishing solution contains an abrasive, an oxidizing agent, a lubricating agent, a chelating agent and water. The polishing solution has the advantages of being high in polishing rate and high in universality.

Description

technical field [0001] The invention relates to the technical field of semiconductor material polishing, in particular to a polishing liquid suitable for III-V semiconductor materials and a preparation method thereof. Background technique [0002] In 1952, Welker et al. discovered compounds (ie, semiconductors) formed by Group III and Group V elements. Some semiconductor materials, such as gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), gallium phosphide (GaP), etc., have advantages that germanium (Ge) and silicon (Si) do not have characteristics, and has a wide range of applications in the field of microwave and optoelectronic devices. Thus, this draws widespread attention to semiconductor materials. [0003] GaAs is the most important and widely used semiconductor material, and it is also the semiconductor material with the most mature research and the largest production volume. GaAs has the advantages of high electron mobility, large band gap, h...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 黄永庆杨莹
Owner 深圳市朗纳研磨材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap