A kind of preparation method of zinc oxide thick film for ultrasonic transducer

A technology of ultrasonic transducer and zinc oxide film, which is applied in the direction of liquid chemical plating, metal material coating process, coating, etc., can solve the problem of affecting the piezoelectricity of the resonance mode of the material thickness, the reduction of the surface compactness of the zinc oxide film, Surface unevenness and other problems, to achieve the effect of increased grain size, reduced porosity, and uniform grains

Active Publication Date: 2021-02-09
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, we have found that the concentration of the reactants will decrease with the prolongation of the reaction time when the zinc oxide film is synthesized by the hydrothermal method, resulting in a decrease in the surface compactness of the formed zinc oxide film. Therefore, the hydrothermal method is used to synthesize a thicker The zinc oxide film will face the problems of increased porosity and uneven surface, which will also affect the piezoelectricity of the material thickness resonance mode

Method used

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  • A kind of preparation method of zinc oxide thick film for ultrasonic transducer
  • A kind of preparation method of zinc oxide thick film for ultrasonic transducer
  • A kind of preparation method of zinc oxide thick film for ultrasonic transducer

Examples

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Embodiment 1

[0031] A method for preparing a zinc oxide thick film for an ultrasonic transducer, comprising the steps of:

[0032] Step 1: Select an N-type single-sided polished silicon wafer with (100) crystal orientation as the substrate, the thickness of the silicon wafer is 500 μm, cut the silicon wafer into a substrate of 2 cm × 2 cm, and clean the substrate, such as figure 1 shown. The cleaning method is as follows: use acetone, alcohol, and deionized water to ultrasonically clean for 10 minutes each, and then dry the operation surface with nitrogen gas after cleaning.

[0033] Step 2: Prepare a zinc oxide seed layer on the substrate using a magnetron sputtering process, such as figure 2 shown. The sputtering parameters are as follows: 99.9% pure zinc oxide target, substrate vacuum 8×10 -4 pa, argon flow rate 40 sccm, oxygen flow rate 5 sccm, pressure 0.02mbar, power 120W, room temperature, sputtering time: 7.5min, sputtering thickness about 0.1μm.

[0034] Step 3: Use the hydroth...

Embodiment 2

[0039] A method for preparing a zinc oxide thick film for an ultrasonic transducer, comprising the steps of:

[0040] Step 1: Select an N-type single-sided polished silicon wafer with (100) crystal orientation as the substrate, the thickness of the silicon wafer is 500 μm, cut the silicon wafer into a substrate of 2 cm×2 cm, and clean the substrate. The cleaning method is as follows: use acetone, alcohol, and deionized water to ultrasonically clean for 10 minutes each, and then dry the operation surface with nitrogen gas after cleaning.

[0041] Step 2: A zinc oxide seed layer is prepared on the substrate using a magnetron sputtering process. The sputtering parameters are as follows: 99.9% pure zinc oxide target, substrate vacuum 8×10 -4 pa, argon flow rate 40 sccm, oxygen flow rate 5 sccm, pressure 0.02mbar, power 120W, room temperature, sputtering time: 7.5min, sputtering thickness about 0.1μm.

[0042] Step 3: using a hydrothermal growth method to prepare a zinc oxide fil...

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Abstract

The invention relates to a method for preparing a zinc oxide thick film for an ultrasonic transducer, and belongs to the technical field of ultrasonic transducer preparation. A zinc oxide seed layer is sputtered on a clean substrate; a zinc oxide film is prepared on the seed layer through a hydrothermal synthesis method; a substrate of the zinc oxide film is placed in a high-temperature nitrogen atmosphere to be annealed; and zinc oxide is sputtered on the annealed zinc oxide film, clearances of the film are filled, and a dense and smooth film surface is obtained. Therefore, the zinc oxide film large in thickness, high in density, smooth in surface and high in piezoelectricity is obtained with low cost.

Description

technical field [0001] The invention relates to a method for preparing a zinc oxide thick film for an ultrasonic transducer, and belongs to the technical field of ultrasonic transducer preparation. Background technique [0002] Ultrasonic transducers can realize the conversion of electrical signals and acoustic signals, and are the core components of ultrasonic imaging systems. The resolution of this imaging technology is closely related to the operating frequency of the ultrasonic transducer, for example, the imaging field concerned by the present invention requires a resolution of several microns to tens of microns, so the operating frequency of the ultrasonic transducer needs to be within 50 Above megahertz, to 300 megahertz. This high-frequency ultrasonic transducer uses piezoelectric materials, based on the thickness resonance mode, to realize the conversion of high-frequency electrical signals and high-frequency acoustic signals, which requires the thickness of the pi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12C23C18/04
CPCC23C18/04C23C18/1216C23C18/1295
Inventor 张金英李德芳李卓王欣杨苏辉田丰硕
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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