Flexible artificial afferent nervous system based on micro-nano structure force-sensitive film and preparation method of system
A technology of micro-nano structure and nervous system, applied in the measurement of the force of the piezoelectric device, semiconductor/solid-state device manufacturing, fluid pressure measurement using the piezoelectric device, etc., can solve slow signal processing, high power consumption, Complicated wiring and other issues can be achieved to improve sensitivity and performance, facilitate mass production, and standardize and order the preparation method
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Embodiment 1
[0045] refer to Figure 1-2 , a flexible artificial afferent nervous system based on a micro-nano structure force-sensitive thin film, the flexible artificial afferent nervous system includes a substrate 1, a nanogenerator and an organic synapse transistor; the nanogenerator and the organic synapse Electrical connections between transistors;
[0046] The organic synapse transistor includes a source electrode 2, a drain electrode 5, a gate electrode 9, a channel layer 3 and a gate dielectric layer 4, and the gate electrode 9, the source electrode 2 and the drain electrode 5 are located on the substrate 1, The gate dielectric layer 4 is located on the source electrode 2, the drain electrode 5 and the channel layer 3;
[0047] The nanogenerator includes a dielectric layer 8, an upper electrode 7 and an upper substrate 6 installed on the gate electrode 9 from bottom to top, and the dielectric layer 8 is a force-sensitive thin film with a micro-nano structure.
[0048] In this wa...
Embodiment 2
[0056] A method for preparing a flexible artificial afferent nervous system based on a micro-nano structure force-sensitive film, characterized in that it comprises the following steps:
[0057] S1: Take the PET substrate as the substrate of the artificial nervous system;
[0058] S2: Install the source, drain and gate on the PET substrate cleaned in S1 through a mask;
[0059] S3: preparing a channel layer;
[0060] S4: performing surface hydrophilic treatment on the channel layer;
[0061] S5: preparing a gate dielectric layer;
[0062] S6: Preparation of micro-nano structure force-sensitive film as the dielectric layer of nanogenerator;
[0063] S7: preparing the upper electrode of the nanogenerator.
[0064] Optimized, the specific manufacturing steps of the substrate in step S1 include:
[0065] A1: Take the substrate and clean it with deionized water;
[0066] A2: Ultrasonic cleaning the cleaned substrate in alcohol;
[0067] A3: Ultrasonic clean the substrate in A2...
Embodiment 3
[0090] A flexible artificial afferent nervous system based on micro-nano structure force-sensitive thin film recognizes the magnitude of the force, because the amplitude of the output voltage of the nanogenerator is proportional to the magnitude of the force, the channel current of the organic synaptic transistor It is proportional to the input of the gate (the output voltage of the nanogenerator), so the magnitude of the force can be identified by identifying the magnitude of the channel current of the synaptic transistor.
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