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Preparation method of double-layer sacrificial layer of practical radio frequency MEMS switch

A sacrificial layer, switch technology, applied in the process, coating, gaseous chemical plating and other directions for producing decorative surface effects, can solve problems such as poor flatness of the sacrificial layer, achieve contact sensitivity, improve yield and life, Good flatness effect

Active Publication Date: 2020-08-11
ZHONGBEI UNIV +1
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Problems solved by technology

[0003] Aiming at the above-mentioned technical problem of poor flatness of the sacrificial layer, the present invention provides a method for preparing a practical RF MEMS switch double-layer sacrificial layer with high flatness, high efficiency, and not easy to fall off

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  • Preparation method of double-layer sacrificial layer of practical radio frequency MEMS switch

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Embodiment Construction

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] A method for preparing a practical radio frequency MEMS switch double-layer sacrificial layer, such as figure 1 shown, including the following steps:

[0025] S1. First, clean the wafer with acetone, then soak the wafer with isopropanol, and clean it with ultrasonic for 5-10 minutes.

[0026] S2. First use a hot plate to preheat the wafer, then place the wafer face up on the surface of the coating machine, so that polyimide is evenly spin-coated on the...

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Abstract

The invention belongs to the technical field of sacrificial layer preparation methods, and particularly relates to a preparation method of a practical radio frequency MEMS switch double-layer sacrificial layer. The method comprises the following steps: preparing a wafer; spin-coating polyimide, advecting and pre-curing; etching the switch anchor point through hole, and curing polyimide; performingspin coating of AZ5214 photoresist; performing photoetching and developing, and reserving the AZ5214 photoresist at the concave part of the polyimide as a second sacrificial layer; sputtering a seedlayer; taking AZ4620 photoresist as a mask, and electroplating an upper electrode of the switch; and releasing the sacrificial layer to obtain a switch. According to the radio frequency MEMS switch, good flatness is obtained through spin coating of the double sacrificial layers, the yield of the radio frequency MEMS switch is increased, the service life of the radio frequency MEMS switch is prolonged, the microwave performance of the radio frequency MEMS switch is good, contact is sensitive, and the radio frequency MEMS switch can be applied to various radio frequency switch scenes. The methodis used for preparing the radio frequency MEMS switch sacrificial layer.

Description

technical field [0001] The invention belongs to the technical field of preparation methods of sacrificial layers, and in particular relates to a preparation method of a practical radio frequency MEMS switch double-layer sacrificial layer. Background technique [0002] The sacrificial layer process is an important process for manufacturing MEMS switches. Poor flatness of the sacrificial layer will lead to deformation of the upper electrode of the switch, thereby affecting the performance of the MEMS switch. The existing sacrificial layer preparation method mainly adopts the natural advection method, but the limitation of the natural advection method is that it cannot completely solve the problem of poor flatness of the polyimide sacrificial layer. Contents of the invention [0003] Aiming at the above-mentioned technical problem of poor flatness of the sacrificial layer, the present invention provides a preparation method of a practical RF MEMS switch double-layer sacrifici...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00611B81C2201/0181Y02P70/50
Inventor 王俊强张世义
Owner ZHONGBEI UNIV
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