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Array substrate, manufacturing method thereof, and display device

A technology of an array substrate and a manufacturing method, which is applied in the display field, can solve problems such as various manufacturing processes of submillimeter light-emitting diodes, and achieve the effects of simplifying the manufacturing process, improving production efficiency, and saving production costs

Active Publication Date: 2022-04-26
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional submillimeter LED backlight module has the disadvantage of various manufacturing processes
[0004] Therefore, it is necessary to propose a technical solution to solve the problem of various manufacturing processes in traditional submillimeter light-emitting diodes

Method used

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  • Array substrate, manufacturing method thereof, and display device
  • Array substrate, manufacturing method thereof, and display device
  • Array substrate, manufacturing method thereof, and display device

Examples

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Embodiment Construction

[0038] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0039] see figure 2 , which is a flowchart of a method for manufacturing an array substrate according to an embodiment of the present application. The manufacturing method of the array substrate includes the following steps:

[0040] S101: Forming a first conductive layer on the substrate, patterning the first conductive layer by using a first patterning process to obtain a first patterned conductive layer, the first patterned conductive layer includes a gate and a first condu...

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Abstract

The present application provides an array substrate and its manufacturing method, and a display device. By using a patterned black negative photoresist layer as an etching barrier layer to etch the second insulating layer, the second insulating layer used to transmit electrical signals and on the same layer as the source and drain electrodes The second conductive part is revealed. The second conductive part replaces the ITO in the traditional technology to electrically connect with the driver chip, reduces the process of forming ITO, and reduces the use of a photomask, simplifies the process, saves production costs and improves production. efficiency. In addition, the patterned black negative photoresist layer as an etching barrier layer will not cause pollution to the etching equipment during the dry etching process of the second insulating layer, and the patterned black negative photoresist layer will not appear after the second insulating layer is etched out of shape.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] The development of miniaturized light-emitting diodes has become one of the hot spots of future display technology. Compared with the current liquid crystal display (Liquid Crystal Display, LCD) and organic light-emitting diode (Organic Light Emitting Diode, OLED) display devices, miniaturized light-emitting diodes have a reaction Fast, high color gamut, high PPI, low energy consumption and other advantages, but its technical difficulties are many and complex, especially its key technology mass transfer technology, the miniaturization of light-emitting diode particles has become a technical bottleneck, and submillimeter light-emitting diodes (Mini- LED) as the product of the combination of miniaturized light-emitting diodes and backplanes, has the characteristics of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12H01L27/15
CPCH01L27/1288H01L27/124H01L27/156H01L25/167H01L25/0753H01L33/44H01L33/62
Inventor 赵斌张鑫肖军城曹丹刘俊领胡小波
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD