High-power high-power-density converter based on silicon carbide MOSFET module and structure

A high power density, converter technology, applied in the direction of converting AC power input to DC power output, converting equipment structural parts, output power conversion devices, etc., can solve problems such as complex system structure control methods, and achieve wide practicality The effect of high performance, reduced volume and simple structure

Inactive Publication Date: 2020-08-18
CHINA UNIV OF MINING & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Complex system structure and changeable control methods pose serious challenges to high-power power electronic equipment to achieve high efficiency and high power density.

Method used

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  • High-power high-power-density converter based on silicon carbide MOSFET module and structure
  • High-power high-power-density converter based on silicon carbide MOSFET module and structure
  • High-power high-power-density converter based on silicon carbide MOSFET module and structure

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Embodiment Construction

[0028]The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention.

[0029] Such as figure 1 As shown, a high-power and high-power-density converter based on a silicon carbide MOSFET module of the present invention includes five three-phase DC / AC converters 2, a DC busbar 4 and an AC busbar 5; The five three-phase DC / AC converters 2 are numbered sequentially, and the DC side of the five three-phase DC / AC converters 2 is connected to the DC power supply or battery 1 through two DC busbars 4; the five three-phase DC / AC The AC side of the AC converter 2 is connected to the three-phase grid or the three-phase load 3 through three AC busbars 5;

[0030] Such as figure 2 As shown, the three-phase DC / AC converter includes a three-phase two-level half-bridge circuit composed of three half-bridge silicon carbide MOSFET power modules 6 and a controller 1...

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Abstract

The invention discloses a high-power high-power-density converter based on a silicon carbide MOSFET module and a structure, and is suitable for the technical field of power electronics. The system comprises five three-phase DC/AC converters, a DC bus bar and an AC bus bar. The five three-phase DC/AC converters are numbered in sequence, and the direct current sides of the five three-phase DC/AC converters are connected with a direct current power supply or a battery through two direct current confluence busbars; and the alternating current sides of the five three-phase DC/AC converters are connected with a three-phase power grid or a three-phase load through three alternating current confluence busbars. Two-way energy flow from the direct current to the alternating current and from the alternating current to the direct current can be realized. The overall structure of the system depends on the characteristics of the silicon carbide MOSFETs, and the overall high-power density design of the system can be achieved.

Description

technical field [0001] The invention designs a high-power high-power-density converter and its structure based on a silicon carbide MOSFET module, and belongs to the technical field of power electronics. Background technique [0002] With the global energy crisis and environmental problems becoming increasingly prominent, the development of power electronics technology has brought new opportunities for solving energy problems. The vigorous development of new energy distributed power generation and the demand for more application scenarios make power electronic equipment develop in the direction of high power, light weight and high power density. The development of traditional industries has also put forward higher requirements for the volume and power density of the converter. For example, the development of the electric aircraft and electric vehicle industries uses electric drive systems to replace the widely used hydraulic and pneumatic drive systems. How to make power el...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/5387H02M7/493H02M1/092H02M1/32H02M7/00H05K7/20
CPCH02M1/092H02M1/32H02M7/003H02M7/493H02M7/53873H05K7/20909H02M1/0038Y02B70/10
Inventor 原熙博李炎张永磊张雷徐一埔叶飞李哲李耀华王子建
Owner CHINA UNIV OF MINING & TECH
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