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Method for inspecting microwave capability of plate-type PECVD

An inspection board and microwave technology, which is applied in the direction of material analysis, instruments, and electrical components using microwave means, can solve the problems of inability to find microwave capabilities, weakened microwave capabilities, and increased production costs, so as to solve the problem of poor color quality and poor quality. Improve the comparison accuracy and improve the effect of accuracy

Active Publication Date: 2020-08-25
JA SOLAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The above method judges that the specific gas flowmeter of the quartz tube is relatively high or low through the mismatch between the film thickness and the refractive index data of a certain quartz tube, so as to find out that the conversion efficiency of the cells produced by the PECVD device is low However, it cannot solve the problems of uneven coating and chromatic aberration in the production process, because when the above method is used to compare the data of each group of quartz tubes horizontally, there will be no obvious data anomalies, so it is impossible to find It is found out that which quartz tube fails to affect the microwave capability of the entire equipment, and at the same time, it is impossible to accurately identify which end of the quartz tube has weakened microwave capability. At present, there is no corresponding troubleshooting method. Therefore, when the microwave When the conduction is abnormal in the silicon nitride film deposition process, the usual way is to replace all the quartz tubes blindly, which will undoubtedly increase the production cost, and even if the quartz tube is replaced, it often cannot fundamentally solve the problems caused by the abnormal microwave conduction. Therefore, there is an urgent need for a method that can accurately troubleshoot and test microwave capabilities.

Method used

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Examples

Experimental program
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Embodiment 1

[0037] The invention provides a method for inspecting the microwave capability of plate-type PECVD, which uses the P-type silicon wafer as the substrate after the processes of texturing, diffusion, and removal of peripheral PN junctions;

[0038] see figure 1 , based on the operation of the single-end microwave system 7 in a single normal quartz tube, the coating parameters of the substrate are designed so that the film thickness on the substrate reaches the range of 50-100nm, so that the detection tool can be used to identify and detect the film on the test piece Thickness and refractive index, in the present invention, all embodiments all adopt unified coating parameters, so that follow-up comparative analysis, the coating parameters during coating in the present invention are: microwave system 7 opening ends (testing end) in the quartz tube to be measured ) power is 3500W, all the other quartz tubes and the microwave system 7 power at the opposite end of the test end in the...

Embodiment 2

[0053] Different from Example 1, this example also detected and recorded 1A test piece, 2A test piece, 3A test piece, 4A test piece, 5A test piece, 6A test piece, 1B test piece, 2B test piece, 3B test piece The refractive index of the test piece, 4B test piece, 5B test piece, and 6B test piece, judge whether there is any abnormality in the special gas flowmeter of the quartz tube through the relationship between the refractive index and the film thickness, and one of the abnormality of the special gas flowmeter is the performance It is: the coating thickness of the test piece sample corresponding to the quartz tube is negatively correlated with the refractive index, but the coating thickness is obviously thicker or thinner than the test piece samples corresponding to other quartz tubes, and the overall thickness is thicker or thinner. It means that the film thickness of all the test pieces in the test column 81 and the film thickness of each test piece in other test columns hav...

Embodiment 3

[0059] The difference from Example 2 is that this test uses N-type silicon after texturing, diffusion, removal of the back and surrounding PN junctions, removal of the back PSG and front BSG, and superposition of aluminum oxide deposition, thermal oxidation and SE laser processes. The sheet is used as the substrate, and the film thickness and refractive index test results of the generated test sheet sample 8 are shown in Table 3:

[0060] table 3

[0061] sample name Film thickness (nm) Refractive index 1B test piece sample 82.7 2.13 2B test piece sample 80.3 2.15 3B test piece sample 83.9 2.10 4B test piece sample 70.2 2.19 5B test piece sample 84.6 2.09 6B test piece sample 85.8 2.08

[0062] In this embodiment, it is found that although the same coating parameters are used, and the film thickness of each test piece sample is negatively correlated with the refractive index, the film thickness of the 4B test piece sa...

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Abstract

The invention discloses a method for inspecting the microwave capacity of plate type PECVD. The method comprises: S1, designing coating parameters; S2, selecting a to-be-tested quartz tube, only starting a single-end microwave system of the to-be-tested quartz tube, introducing reaction gas, and coating the silicon wafer by adopting coating parameters to obtain a test wafer sample; S3, circularlyoperating the microwave system at each end of each quartz tube in S2 one by one; S4, respectively selecting the same column of test pieces parallel to the microwave conduction direction on each groupof test piece samples as a test column, detecting the film thickness of each test piece in each test column, and if the difference between the maximum value and the minimum value of the film thicknessin the test column is not greater than 20nm, determining that the microwave capability of the test end of the quartz tube to be tested corresponding to the test column is normal; and if not, determining that the microwave capability of the test end of the corresponding quartz tube to be tested is abnormal. According to the method provided by the invention, the quartz tube with abnormal microwaveconduction and the microwave end with abnormal microwave conduction can be accurately locked, and the reasons of non-uniform coating and productivity reduction can be found out.

Description

technical field [0001] The invention relates to the technical field of silicon cell manufacturing, in particular to a method for inspecting the microwave capability of plate-type PECVD. Background technique [0002] The principle of plate PECVD deposition of silicon nitride film is to use microwaves to ionize the gas containing the constituent atoms of the film to form a plasma to react, thereby depositing the desired film on the substrate. Whether the microwave capability is normal largely determines whether the deposition of the silicon nitride film can meet the standard. [0003] Microwave refers to electromagnetic waves with a frequency of 300 MHz to 300 GHz, and the capability of microwave will decrease with the increase of transmission distance. Under normal circumstances, the linear microwave power will gradually decline from the input end along the direction of the quartz tube; but when there is an abnormality in the hardware such as the quartz tube, the decline tre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/06G01N22/00H01L21/67H01L31/0216
CPCG01B11/06G01B11/0683G01N22/00H01L21/67253H01L31/02168
Inventor 朱少杰王贵梅赵江雷
Owner JA SOLAR
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