Infrared detector and its preparation method
An infrared detector and base-level technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of difficulty in meeting photoelectric detection requirements, long response time of photosensitive devices, and low detection sensitivity, etc. Responsiveness, reduced response time, improved extraction efficiency
Active Publication Date: 2021-10-12
深圳市奥伦德元器件有限公司
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Problems solved by technology
[0003] The output controlled end of the existing AC solid state relay is generally integrated with a photosensitive device and several field effect tubes. The response time of the photosensitive device is too long and the detection sensitivity is not high, which is mainly reflected in the weak detection ability for weak light, which is difficult to meet The demand for photoelectric detection in the field of control
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[0040] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0041] It should be noted that although the structural division is carried out in the schematic diagram of the device, and the logical order is shown in the flowchart, in some cases, the structural division in the device or the sequence in the flowchart can be executed. steps shown or described. The terms "first", "second" and the like in the specification and claims and the above drawings are used to distinguish similar objects, and not necessarily used to describe a specific sequence or sequence.
[0042] At the same time, in order to simplify the way of description and make the content of the d...
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Abstract
The invention discloses an infrared detector and a preparation method thereof, wherein the infrared detector comprises: a metal electrode, a substrate, a gallium arsenide-based layer and a graphene layer arranged sequentially from bottom to top; The gallium arsenide base layer is parallel to the long strip array groove, the gallium arsenide base layer is arranged on the strip array type groove, the surface of the gallium arsenide base layer has indium arsenide quantum dots, and the metal electrode is arranged on the gallium arsenide base layer ends. In the present invention, by arranging indium arsenide quantum dots on the surface of the gallium arsenide base layer, the gallium arsenide base layer can be grown laterally relative to the elongated array groove, thereby improving the photoresponse capability of the gallium arsenide base layer and shortening the The response time of the infrared detector, through the cooperation between the graphene layer, the gallium arsenide base layer and the metal electrode, can improve the extraction efficiency of photogenerated carriers and improve the sensitivity of the infrared detector.
Description
technical field [0001] The invention relates to the technical field of infrared photoelectric detection, in particular to an infrared detector, a preparation method thereof, and an AC solid-state relay. Background technique [0002] AC solid state relay (solid state releys, SSR) is a non-contact on-off electronic switch, which uses the switching characteristics of electronic components (such as switching transistors, bidirectional thyristors and other semiconductor devices) to achieve non-contact, no spark The control effect of turning on and off the circuit belongs to a four-terminal active device, two of which are input control terminals, and the other two are output controlled terminals. The advantages of AC solid state relays include fast switching speed, high operating frequency, long service life, low noise and reliable operation. At present, AC solid state relays are gradually replacing conventional electromagnetic relays, and have been widely used in electronic contr...
Claims
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IPC IPC(8): H01L31/0352H01L31/109H01L31/18H03K17/78
CPCH01L31/035218H01L31/035281H01L31/109H01L31/18H03K17/78Y02P70/50
Inventor 杨为家何畏林士修吴质朴
Owner 深圳市奥伦德元器件有限公司