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A preparation method of nano silicon carbide particles based on naf shape regulator

A technology of nano-silicon carbide and regulator, applied in nanotechnology for materials and surface science, chemical instruments and methods, nanotechnology, etc., can solve problems such as uneven particle size distribution, difficult process control, and high reaction temperature. Achieve the effects of inhibiting linear growth, easy process, and uniform particle size distribution

Active Publication Date: 2021-08-13
HARBIN INST OF TECH
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problems of high cost, high reaction temperature, difficult process control, complicated process, low yield, low purity and uneven particle size distribution in the preparation of existing silicon carbide powder, and provide a method based on Preparation method of nano-silicon carbide particles of NaF shape regulator

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  • A preparation method of nano silicon carbide particles based on naf shape regulator
  • A preparation method of nano silicon carbide particles based on naf shape regulator

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specific Embodiment approach 1

[0017] Specific embodiment one: the present embodiment is a kind of preparation method based on the nano-silicon carbide particle of NaF shape regulator, and it realizes according to the following steps:

[0018] 1. Preparation of carbon precursor:

[0019] Glucose is placed in a tube furnace, heated to 400-800°C under the protection of nitrogen and carbonized for 1-4 hours to obtain a carbon precursor;

[0020] 2. Place the carbon precursor, NaF, nano-silicon micropowder and ethanol solution with a mass concentration of 20-30% obtained in step 1 in a ball mill for ball milling, take it out and spray dry it to obtain a mixed material;

[0021] 3. Place the mixed material obtained in step 2 in a high-temperature sintering furnace, raise the temperature to 1200-1800° C. for 1-8 hours under the protection of nitrogen, and then cool to room temperature to obtain the pre-product;

[0022] Four, impurity removal treatment:

[0023] Immerse the pre-product obtained in step 3 in hyd...

specific Embodiment approach 2

[0028] Embodiment 2: This embodiment is different from Embodiment 1 in that the particle size of the glucose in step 1 is 10-100 nm. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0029] Embodiment 3: This embodiment is different from Embodiment 1 or Embodiment 2 in that the rate of temperature increase in step 1 is 1-10° C. / min. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

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Abstract

A method for preparing nano-silicon carbide particles based on NaF shape regulator, which belongs to the technical field of silicon carbide preparation and semiconductor material preparation, and solves the problems of high cost, high reaction temperature and difficult process control in the preparation of existing silicon carbide powders , complex process, low yield, low purity and uneven particle size distribution. Methods: 1. Preparation of carbon precursor; 2. Carbon precursor, NaF, nano-silicon powder and ethanol solution are ball milled and then spray-dried to obtain a mixed material; 3. The mixed material is sintered in a high-temperature furnace to obtain a pre-product; 4. Impurity removal treatment . The invention effectively suppresses the supersaturated linear growth of silicon carbide through the interaction of NaF, silicon source and carbon source, and controls particle shape and particle size. The preparation method of the invention is simple, the reaction temperature is moderate, and the process is easy to control, thereby improving the production efficiency, and the product has high purity and uniform particle size distribution. The invention is applied to the preparation of nano-scale silicon carbide particles.

Description

technical field [0001] The invention belongs to the technical fields of silicon carbide preparation and semiconductor material preparation, and in particular relates to a method for preparing nanometer silicon carbide particles based on a NaF shape regulator. Background technique [0002] Silicon carbide ceramics have the advantages of good mechanical properties, oxidation resistance, wear resistance, thermal stability, thermal shock resistance and chemical corrosion resistance, as well as small thermal expansion coefficient and large thermal conductivity. Some silicon carbide ceramic products with specific structures, such as silicon carbide ceramic membranes, often require the particle size of the raw material to be small enough and the degree of sphericity to be high enough in order to meet the application requirements. The preparation of this kind of nano-scale silicon carbide powder is becoming more and more popular. There have been a lot of in-depth research on the pre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/984B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01P2002/72C01P2004/64C01P2006/80C01B32/984
Inventor 王志江
Owner HARBIN INST OF TECH
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