Preparation method of cubic phase silicon carbide microparticles

A technology of phase silicon carbide and micro-particles, which is applied in the field of preparation of cubic silicon carbide micro-particles, can solve the problems of high cost of cubic silicon carbide powder, uneven particle size distribution, and difficult control of the process, and achieve the suppression line shape growth, simple preparation method and easy process

Pending Publication Date: 2022-08-02
内蒙古海特华材科技有限公司
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Problems solved by technology

[0003] The purpose of the present invention is to solve the problems of high cost, high reaction temperature, difficult process control, complex process, low yield, low purity and un

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  • Preparation method of cubic phase silicon carbide microparticles
  • Preparation method of cubic phase silicon carbide microparticles

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Example Embodiment

[0021] Specific embodiment 1: This embodiment is a preparation method of cubic phase silicon carbide micro-particles, which is realized according to the following steps:

[0022] 1. Disperse the silica microspheres in a hydrogen peroxide solution, take out after 1-24 hours, and dry at 60-90 °C to obtain activated silicon source particles;

[0023] 2. After the above activation, the silicon source particles are placed in a cobalt acetylacetonate solution for 5 to 20 hours to obtain silica microspheres loaded with zirconium acetylacetonate, and then a gaseous carbon source is introduced under an inert gas for high temperature treatment. After the impurity treatment, cubic-phase silicon carbide micro-particles are obtained, and the preparation method is completed.

Example Embodiment

[0024] Embodiment 2: This embodiment is different from Embodiment 1 in that the mass-volume ratio of the silica microspheres to the hydrogen peroxide solution described in step 1 is 1 g:(10-50) ml. Other steps and parameters are the same as in the first embodiment.

Example Embodiment

[0025] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the size of the silica microspheres in step 1 is 0.1-5 μm. Other steps and parameters are the same as in the first or second embodiment.

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Abstract

The invention discloses a preparation method of cubic phase silicon carbide micron particles, belongs to the technical field of silicon carbide preparation and semiconductor material preparation, and aims to solve the problems of high cost, high reaction temperature, difficulty in process control, complex process, low yield, lower purity and non-uniform particle size distribution in the existing preparation of cubic phase silicon carbide powder. The method comprises the following steps: treating silicon dioxide microspheres in a hydrogen peroxide solution to obtain activated silicon source particles; and introducing a gas carbon source in the presence of inert gas for high-temperature treatment, and removing impurities to obtain the zirconium acetylacetonate-loaded silicon dioxide microspheres. The cobalt acetylacetonate is used as a shape regulator, the silicon dioxide microspheres are used as a shape template, and the gaseous carbon source interacts with one another, so that the supersaturated linear growth of silicon carbide is effectively inhibited, and the morphology and the particle size of spherical particles are controlled. The method is simple, moderate in temperature, easy to control, high in production efficiency, high in product purity and uniform in particle size distribution. The method is suitable for preparing the micron-sized cubic phase silicon carbide particles.

Description

technical field [0001] The invention belongs to the technical fields of silicon carbide preparation and semiconductor material preparation, and in particular relates to a preparation method of cubic phase silicon carbide microparticles. Background technique [0002] Silicon carbide ceramics have the advantages of good mechanical properties, oxidation resistance, wear resistance, thermal stability, thermal shock resistance and chemical corrosion resistance, as well as small thermal expansion coefficient and high thermal conductivity. Some specific structures of silicon carbide require particles to have a good spherical microscopic morphology, and the size is concentrated in the micrometer level. However, the preparation process of micron-sized SiC particles with spherical micro-morphology has limitations, such as low controllability, complex process, mostly linear and granular mixed morphology, and the purity of the synthesized powder is low, and the powder particles Disadva...

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Application Information

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IPC IPC(8): C01B32/97
CPCC01B32/97C01P2004/38C01P2002/72C01P2004/03
Inventor 王志江
Owner 内蒙古海特华材科技有限公司
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