Preparation method of nano silicon carbide particles based on NaF shape regulator

A nano-silicon carbide and regulator technology, which is applied in the field of semiconductor material preparation and silicon carbide preparation, can solve the problems of uneven particle size distribution, difficult process control, and high reaction temperature, and achieves inhibition of linear growth, easy process, and particle size. Evenly distributed effect

Active Publication Date: 2020-08-28
HARBIN INST OF TECH
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  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problems of high cost, high reaction temperature, difficult process control, complicated process, low yield, low purity and uneven particle size distribution in the preparation of existing silicon carbide powder, and provide a method based on Preparation method of nano-silicon carbide particles of NaF shape regulator

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  • Preparation method of nano silicon carbide particles based on NaF shape regulator
  • Preparation method of nano silicon carbide particles based on NaF shape regulator

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specific Embodiment approach 1

[0017] Specific embodiment one: the present embodiment is a kind of preparation method based on the nano-silicon carbide particle of NaF shape regulator, and it realizes according to the following steps:

[0018] 1. Preparation of carbon precursor:

[0019] Glucose is placed in a tube furnace, heated to 400-800°C under the protection of nitrogen and carbonized for 1-4 hours to obtain a carbon precursor;

[0020] 2. Place the carbon precursor, NaF, nano-silicon micropowder and ethanol solution with a mass concentration of 20-30% obtained in step 1 in a ball mill for ball milling, take it out and spray dry it to obtain a mixed material;

[0021] 3. Place the mixed material obtained in step 2 in a high-temperature sintering furnace, raise the temperature to 1200-1800° C. for 1-8 hours under the protection of nitrogen, and then cool to room temperature to obtain the pre-product;

[0022] Fourth, impurity removal treatment:

[0023] Immerse the pre-product obtained in step 3 in h...

specific Embodiment approach 2

[0028] Embodiment 2: This embodiment is different from Embodiment 1 in that the particle size of the glucose in step 1 is 10-100 nm. Other steps and parameters are the same as in the first embodiment.

specific Embodiment approach 3

[0029] Embodiment 3: This embodiment is different from Embodiment 1 or Embodiment 2 in that the rate of temperature increase in step 1 is 1-10° C. / min. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

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Abstract

The invention discloses a preparation method of nano silicon carbide particles based on a NaF shape regulator, belongs to the technical field of silicon carbide preparation and semiconductor materialpreparation, and aims to solve the problems of high cost, high reaction temperature, difficulty in process control, complex process, low yield, low purity and non-uniform particle size distribution inthe conventional silicon carbide powder preparation. The method comprises the following steps: 1, preparing a carbon precursor; 2, carrying out ball milling on the carbon precursor, NaF, nanometer silica powder and an ethanol solution, and carrying out spray drying to obtain a mixed material; 3, sintering the mixed material in a high-temperature sintering furnace to obtain a pre-product; 4, carrying out impurity removal treatment. Through interaction of NaF, a silicon source and a carbon source, supersaturated linear growth of silicon carbide is effectively inhibited, and particle morphologyand particle size are controlled. The preparation method is simple, the reaction temperature is moderate, the process is easy to control, the production efficiency is improved, the product purity is high, and the particle size distribution is uniform. The method is applied to preparation of the nanoscale silicon carbide particles.

Description

technical field [0001] The invention belongs to the technical fields of silicon carbide preparation and semiconductor material preparation, and in particular relates to a method for preparing nanometer silicon carbide particles based on a NaF shape regulator. Background technique [0002] Silicon carbide ceramics have the advantages of good mechanical properties, oxidation resistance, wear resistance, thermal stability, thermal shock resistance and chemical corrosion resistance, as well as small thermal expansion coefficient and high thermal conductivity. Some silicon carbide ceramic products with specific structures, such as silicon carbide ceramic membranes, often require the particle size of the raw material to be small enough and the degree of sphericity to be high enough in order to meet the application requirements. The preparation of this kind of nano-scale silicon carbide powder is becoming more and more popular. There have been a lot of in-depth research on the prep...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/984B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01P2002/72C01P2004/64C01P2006/80C01B32/984
Inventor 王志江
Owner HARBIN INST OF TECH
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