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Titanium-silicon-carbon interface modified SiCf/SiC wave-absorbing composite material and preparation method thereof

A composite material, titanium silicon carbon technology, used in magnetic field/electric field shielding, electrical components and other directions, can solve the problems of inability to achieve electromagnetic wave absorption, poor wave absorption performance, etc., to achieve inhibition of volume shrinkage, good wave absorption performance, and reduce agglomeration phenomenon Effect

Active Publication Date: 2020-08-28
SHANGHAI UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Duan S (Duan S, et al.Enhanced mechanical and microwave absorption properties of SiCf / SiC composite using aluminum powderas active filler[J]. Literature) found that the SiCf / SiC composite prepared by the (precursor impregnation cracking method) PIP process Material, the reflection coefficient in the frequency range of 8.2-12.4GHz is greater than -10dB, which cannot reach 90% of the electromagnetic waves absorbed, and the wave absorption performance is poor

Method used

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  • Titanium-silicon-carbon interface modified SiCf/SiC wave-absorbing composite material and preparation method thereof
  • Titanium-silicon-carbon interface modified SiCf/SiC wave-absorbing composite material and preparation method thereof
  • Titanium-silicon-carbon interface modified SiCf/SiC wave-absorbing composite material and preparation method thereof

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Embodiment 1

[0026] A preparation method of titanium silicon carbon interface modified SiCf / SiC wave-absorbing composite material, comprising the following steps (such as figure 1 shown):

[0027] Step 1. Prepare Ti on the surface of 3D4d silicon carbide fiber fabric by chemical vapor infiltration process 3 SiC 2 interfacial phase, the TiCl 4 and H 2 As a precursor system, Ar is passed into the chemical vapor deposition furnace as a diluent gas and a protective gas, where H 2 and TiCl 4 The molar ratio is 20, the hydrogen flow rate is 500 sccm, the argon gas flow rate is 500 sccm, and the temperature is 1100 °C and the pressure is 8 kPa, and it is deposited for 5 hours to form a silicon carbide fiber fabric reinforcement containing an interface phase.

[0028] Step 2, dissolve polycarbosilane solid particles in xylene to form a solution, add a certain amount of Ti 3 SiC 2 Filler, as a slurry for the first impregnation, Ti 3 SiC 2into the SiC matrix. The amount of titanium-silicon...

Embodiment 2

[0032] A method for preparing a titanium-silicon-carbon interface modified SiCf / SiC wave-absorbing composite material, comprising the following steps:

[0033] Step 1. Prepare Ti on the surface of the 2D laminated silicon carbide fiber fabric by chemical vapor infiltration process 3 SiC 2 interfacial phase, the TiCl 4 and H 2 As a precursor system, Ar is passed into the chemical vapor deposition furnace as a diluent gas and a protective gas, where H 2 and TiCl 4 The molar ratio is 10, the hydrogen flow rate is 350 sccm, the argon gas flow rate is 450 sccm, and the temperature is 1200 °C and the pressure is 6 kPa a, and it is deposited for 7 hours to form a silicon carbide fiber fabric reinforcement containing an interface phase.

[0034] Step 2, dissolve polycarbosilane solid particles in xylene to form a solution, add a certain amount of Ti 3 SiC 2 Filler, as a slurry for the first impregnation, Ti 3 SiC 2 into the SiC matrix. The amount of titanium silicon carbon fi...

Embodiment 3

[0038] A method for preparing a titanium-silicon-carbon interface modified SiCf / SiC wave-absorbing composite material, comprising the following steps:

[0039] Step 1, prepare Ti on the surface of 2.5D silicon carbide fiber fabric by chemical vapor infiltration process 3 SiC 2 interfacial phase, the TiCl 4 and H 2 As a precursor system, Ar is passed into the chemical vapor deposition furnace as a diluent gas and a protective gas, where H 2 and TiCl 4 The molar ratio is 10, the flow rate of hydrogen gas is 700 sccm, the flow rate of argon gas is 800 sccm, and the temperature is 900 °C and the pressure is 4 kPa, and it is deposited for 9 hours to form a silicon carbide fiber fabric reinforcement containing an interface phase

[0040] Step 2, dissolve polycarbosilane solid particles in xylene to form a solution, add a certain amount of Ti 3 SiC 2 Filler, as a slurry for the first impregnation, Ti 3 SiC 2 into the SiC matrix. The amount of titanium-silicon-carbon filler a...

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Abstract

The invention discloses a titanium-silicon-carbon interface modified SiCf / SiC wave-absorbing composite material and a preparation method thereof. The preparation method comprises the steps: putting asilicon carbide fiber prefabricated body in a constant-temperature area of a CVD furnace, and depositing a titanium-silicon-carbon interface layer on the surface of silicon carbide fibers through a chemical vapor infiltration method within a proper temperature range; and soaking in slurry containing polycarbosilane and titanium silicon carbon to be impregnated; and preparing the ceramic matrix composite material through a precursor impregnation pyrolysis method (PIP). The SiCf / SiC composite material containing the Ti3SiC2 interface is prepared, the process is simple, the cost is low, the dielectric constant of the wave-absorbing composite material is effectively regulated and controlled, and a good wave-absorbing effect is achieved.

Description

technical field [0001] The invention relates to the field of wave-absorbing silicon carbide composite materials, in particular to a titanium-silicon-carbon interface-modified SiCf / SiC wave-absorbing composite material and a preparation method thereof. Background technique [0002] Absorbing materials are widely used in daily life and national defense technology. With the continuous development of modern radar and microwave electronic technology, the human body and equipment are increasingly affected by electromagnetic waves. In the military field, various weapons are also facing serious threats in combat. Using radar for detection is a common military method. With the rapid development of technology, it is very important to study the stealth function of weapons. Stealth technology usually has two methods: shape design and wave-absorbing material selection. It is difficult to change the direction of reflected waves by designing a complex polyhedron shape. Therefore, a commo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/80C04B35/565H05K9/00
CPCC04B35/565C04B2235/3817C04B2235/3891C04B2235/5244H05K9/0081
Inventor 彭雨晴徐海明魏子涵朱界李爱军刘立起张方舟白瑞成
Owner SHANGHAI UNIV
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