Structure of intrinsic passivation layer of silicon heterojunction solar cell and manufacturing method of structure

Abstract

The invention relates to the technical field of solar cells, in particular to a structure of an intrinsic passivation layer of a silicon heterojunction solar cell and a manufacturing method of the structure. The structure comprises a first light receiving surface arranged over a monocrystalline silicon wafer substrate and a second light receiving surface arranged under the monocrystalline siliconwafer substrate; the intrinsic silicon-based thin film passivation layer is of a three-layer composite structure at least in the first light receiving surface or in both the first light receiving surface and the second light receiving surface; in the three-layer composite structure, the first layer and the third layer are intrinsic doped hydrogenated amorphous silicon layers respectively, and thesecond layer is a wide-band gap intrinsic hydrogenated amorphous SiAx: H layer arranged between the first layer and the third layer. The manufacturing method comprises the following steps: depositingthe amorphous silicon layer on the light receiving surface of the crystalline silicon substrate; growing a wide band gap silicon-based i-SiAx layer; and growing an amorphous silicon layer to form theintrinsic silicon-based passivation layer. The problems that high passivation performance and low parasitic absorption cannot be obtained at the same time and the high passivation performance and lowseries resistance restrict each other are solved; and according to the intrinsic silicon-based passivation layer, the recombination rate of the surface of crystalline silicon can be reduced, and incident light reaching the absorption layer can be improved by using a wide band gap.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a structure of an intrinsic passivation layer of a silicon heterojunction solar cell and a manufacturing method thereof. Background technique [0002] With the development of economy and society, the extensive use of conventional fossil energy has not only led to serious environmental pollution problems, but also the increasingly scarce resources. Vigorously developing and utilizing clean energy has become a powerful guarantee for the sustainable development of human society. The sun is inexhaustible, clean and pollution-free, and is an ideal green energy source. Solar cells directly convert light energy into electrical energy, which is an important way to utilize the sun. [0003] Silicon heterojunction (SHJ) solar cells passivate the surface defect states of crystalline silicon (c-Si) with the help of hydrogenated amorphous silicon thin film (a-Si:H), which can achieve ult...

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Problems solved by technology

[0007] In view of the problems involved in the background technology, the purpose of the present invention is to provide an intrinsic passivation layer structure and a manufacturing method of a silicon heterojunction solar cell, which are used to solve the problem of high passivation performance and low parasitic absorption in the prior art. The mutual restriction of high passivation performance and low series resistance

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