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Si-based GaN millimeter wave transmission line structure and preparation method

A technology of transmission line structure and millimeter wave, which is applied in the direction of waveguide, waveguide-type devices, electrical components, etc., and can solve the problems of complex preparation process, high transmission line loss, and insufficient to meet the application requirements of millimeter wave circuits.

Pending Publication Date: 2020-09-11
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the preparation of the metal ground on the back of the Si substrate reduces a part of the energy loss, due to the influence of the p-type conductive channel at the AlN / Si interface in the Si-based GaN structure and the influence of the AlN nucleation layer and the buffer layer, the loss of the transmission line of the GCPW structure Still high, not enough to meet its application requirements in millimeter wave circuits, and because the metal ground on the back of the Si substrate needs to be connected to the bottom line of the CPW, the preparation process is more complicated

Method used

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  • Si-based GaN millimeter wave transmission line structure and preparation method
  • Si-based GaN millimeter wave transmission line structure and preparation method
  • Si-based GaN millimeter wave transmission line structure and preparation method

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Embodiment 1

[0048] See Figure 4 , Figure 4 It is a structural schematic diagram of a Si-based GaN millimeter wave transmission line structure provided by an embodiment of the present invention. This embodiment provides a millimeter wave transmission line structure, and the preparation method of the millimeter wave transmission line structure includes:

[0049] Si substrate 10;

[0050] AlN nucleation layer 20, located on the Si substrate 10;

[0051] III-nitride transition layer 30, located on the AlN nucleation layer 20;

[0052] a GaN layer 40 located on the III-nitride transition layer 30;

[0053] a metal ground 50 located on the GaN layer 40;

[0054] a dielectric insertion layer 60 with several through holes, located on the metal ground 50;

[0055] Several CPWs 80 are located on the dielectric insertion layer 60 , and each CPW 80 is correspondingly connected to the metal ground 50 through a through hole.

[0056]Further, the material of the metal ground 50 may include Au, ...

Embodiment 2

[0061] See Figure 5 , Figure 6a-Figure 6h , Figure 5 is a schematic flowchart of a method for preparing a millimeter wave transmission line structure provided by an embodiment of the present invention, Figure 6a-Figure 6h It is a structural schematic diagram of a millimeter wave transmission line structure provided by an embodiment of the present invention. This embodiment provides a method for preparing a millimeter-wave transmission line structure, and the method for preparing the millimeter-wave transmission line structure includes:

[0062] Step 1, such as Figure 6a As shown, the Si substrate 10 is selected.

[0063] Step 2, such as Figure 6b As shown, an AlN nucleation layer 20 is prepared on a Si substrate 10 .

[0064] Specifically, the AlN nucleation layer 20 is prepared on the Si substrate 10 by MOCVD (Metal-organic Chemical Vapor Deposition, metal-organic compound chemical vapor deposition).

[0065] Step 3, if Figure 6c As shown, a III-nitride transit...

Embodiment 3

[0087] In this embodiment, the Si substrate 10, the AlN nucleation layer 20, the III-nitride transition layer 30, and the GaN layer 40 are sequentially prepared from bottom to top in accordance with the method of the first embodiment. The rest of the steps are described in a specific implementation manner. After the Si substrate 10, the AlN nucleation layer 20, the III-nitride transition layer 30 and the GaN layer 40 are prepared, the following steps can also be specifically performed:

[0088] S1: cleaning the Si-based GaN structure, that is, cleaning the Si substrate 10 , the AlN nucleation layer 20 , the III-nitride transition layer 30 and the GaN layer 40 arranged sequentially from bottom to top.

[0089] Specifically, the Si substrate 10, AlN nucleation layer 20, III-nitride transition layer 30, and GaN layer 40 prepared from bottom to top were ultrasonically cleaned with acetone, isopropanone, and deionized water for 5 min in sequence, and then cleaned with High-purity n...

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Abstract

The invention discloses a Si-based GaN millimeter wave transmission line structure and a preparation method. The Si-based GaN millimeter wave transmission line structure comprises a Si substrate; an AlN nucleating layer, arranged on the Si substrate; a III-nitride transition layer, arranged on the AlN nucleating layer; a GaN buffer layer, arranged on the III-nitride transition layer; a metal ground layer over the GaN buffer layer; a dielectric insertion layer over the metal formation; a CPW over the dielectric insertion layer; and a ground wire of the CPW connected with the metal ground layerthrough the through hole in the medium insertion layer. The objective of the structure is to solve the problem of high radio frequency loss of a transmission line in millimeter wave circuit application. The invention provides a millimeter wave application-oriented transmission line structure on a Si-based GaN structure and a preparation method. A layer of metal ground is inserted between a CPW anda GaN layer to shield the influence of a p-type conducting channel at an AlN / Si interface, so that the radio frequency loss of the transmission line is reduced, and the application requirement of thetransmission line in a millimeter wave circuit is met.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a Si-based GaN millimeter-wave transmission line structure and a preparation method. Background technique [0002] The third-generation semiconductor material GaN has the advantages of wide band gap, high critical breakdown field strength, high electron mobility, and high saturation electron drift velocity. It has great development potential in the field of microwave and millimeter wave high-power electronic devices and can be widely used. In aerospace, radar, 5G communication and other fields. Moreover, compared with sapphire-based GaN materials and SiC-based GaN structures, Si-based GaN structures have the advantages of large wafer size, low cost, and compatibility with Si-based CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) processes. It is conducive to promoting the large-scale commercial application of GaN microwav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/66H01P3/00H01P11/00
CPCH01L23/66H01P3/003H01P11/003H01L2223/6627
Inventor 张进成刘俊伟刘志宏郝璐宋昆璐周弘赵胜雷张苇杭段小玲郝跃
Owner XIDIAN UNIV
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