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A kind of separation method of crystal and crystal support

A separation method and crystal technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve problems such as damage, easy deviation of cutting direction, loss, etc., to reduce risks, simple separation method, and low cost Effect

Active Publication Date: 2021-05-25
江苏超芯星半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Depend on figure 1 It can be seen that there is a risk of misoperation in this kind of operation, and the cutting direction is easy to deviate, resulting in the cutting of a fully grown crystal, which directly leads to crystal breakage or damage, which seriously causes losses, increases costs, and even causes accidental injury to personnel.

Method used

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  • A kind of separation method of crystal and crystal support
  • A kind of separation method of crystal and crystal support
  • A kind of separation method of crystal and crystal support

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1 provides a method for separating the grown silicon carbide crystal 1 (40 mm thick) from the graphite crystal holder 2 fixed at the bottom thereof, comprising the following steps:

[0032] 1. Put the silicon carbide crystal 1 to be separated and the graphite crystal holder 2 fixed with it into the tube furnace;

[0033] 2. Open the air inlet on the tube furnace and let in air;

[0034] 3. Open the exhaust port on the tube furnace to maintain air circulation;

[0035] 4. Set the tube furnace temperature to 900°C and the heating rate to 10°C / min;

[0036] 5. Set the carbon oxidation time to 12h and keep the temperature unchanged;

[0037] 6. After the carbon oxidation reaction is carried out for 12 hours, set the cooling rate to 10°C / min;

[0038] 7. When the temperature in the tube furnace is lowered to below 50°C, open the tube furnace. At this time, the graphite has been completely oxidized to carbon dioxide and discharged out of the tube furnace, leavin...

Embodiment 2

[0041] Embodiment 2 provides a method for separating the grown aluminum nitride crystal 1 (10 mm thick) from the graphite crystal holder 2 fixed at the bottom thereof, comprising the following steps:

[0042] 1. Put the aluminum nitride crystal 1 to be separated and the graphite crystal holder 2 fixed with it into a muffle furnace (model: FR-1236);

[0043] 2. Open the air inlet on the muffle furnace and let in air;

[0044] 3. Open the exhaust port on the muffle furnace to maintain air circulation;

[0045] 4. Set the muffle furnace temperature to 800°C and the heating rate to 1°C / min;

[0046] 5. Set the carbon oxidation time to 6h and keep the temperature unchanged;

[0047] 6. After the carbon oxidation reaction is carried out for 6 hours, set the cooling rate to 1°C / min;

[0048] 7. When the temperature in the muffle furnace drops below 50°C, turn on the muffle furnace. At this time, the graphite has been completely oxidized to carbon dioxide and discharged out of the ...

Embodiment 3

[0050] Embodiment 3 provides a method for separating the grown gallium nitride crystal 1 (10 mm thick) from the graphite crystal holder 2 fixed at the bottom thereof, comprising the following steps:

[0051] 1. Put the gallium nitride crystal 1 to be separated and the graphite crystal holder 2 fixed with it into a muffle furnace (model: FR-1236);

[0052] 2. Open the air inlet on the muffle furnace and let in air;

[0053] 3. Open the exhaust port on the muffle furnace to maintain air circulation;

[0054] 4. Set the muffle furnace temperature to 1000°C and the heating rate to 20°C / min;

[0055] 5. Set the carbon oxidation time to 12 hours and keep the temperature unchanged;

[0056] 6. After the carbon oxidation reaction is carried out for 12 hours, set the cooling rate to 20°C / min;

[0057] 7. When the temperature in the muffle furnace drops below 50°C, turn on the muffle furnace. At this time, the graphite has been completely oxidized to carbon dioxide and discharged out...

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Abstract

The invention belongs to the technical field of crystal growth, and provides a method for separating crystals and crystal holders, which is characterized in that the crystals to be separated and the crystal holders fixed thereto are placed in a high-temperature oxidation furnace, and passed through the high-temperature oxidation furnace. Inject oxygen-containing gas to carry out carbon oxidation reaction, and the crystal can be separated from the crystal holder. The method for separating crystals and crystal holders provided by this application utilizes high temperature to oxidize solid graphite into gaseous carbon dioxide, thereby successfully separating grown crystals and graphite. The method for separating the crystal and the crystal holder of the present application is simple and easy, and the cost is low. The non-mechanical method of separating the crystal from the crystal holder reduces the risks associated with traditional methods. The separation method of the present application is simple and effective without damage to the crystal itself.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a method for separating a crystal from a crystal holder. Background technique [0002] Silicon carbide crystalline material is the representative of the third generation semiconductor, which has excellent characteristics such as large forbidden band width, high breakdown electric field, large thermal conductivity, small dielectric constant and stable physical and chemical properties, especially excellent heat resistance and Oxidation resistance, it begins to decompose at 2050℃ in the atmosphere. Therefore, it is considered as an ideal semiconductor material for the manufacture of high-temperature, high-frequency, high-voltage and other high-power power electronic devices, and has great application prospects. [0003] At present, the growth of silicon carbide single crystal adopts physical vapor transport method, high temperature chemical vapor deposition method, liquid ph...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/00C30B29/36
CPCC30B29/36C30B33/00
Inventor 刘欣宇袁振洲
Owner 江苏超芯星半导体有限公司
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