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Pyrochlore nanocrystalline dielectric film with ultrahigh energy storage performance and preparation method of the pyrochlore nanocrystalline dielectric film

A technology of pyrochlore and nanocrystals, applied in the direction of fixed capacitor dielectrics, circuits, capacitors, etc., can solve the problems of low electric field breakdown strength and achieve the effects of improved breakdown strength, simple process, and low cost

Active Publication Date: 2020-09-25
SHENYANG POLYTECHNIC UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, (Pb 0.88 Ca 0.12 ) ZrO 3 Compared with the current mainstream dielectric materials, the electric field breakdown strength of the film is still relatively low (only 2.8MV / cm)

Method used

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  • Pyrochlore nanocrystalline dielectric film with ultrahigh energy storage performance and preparation method of the pyrochlore nanocrystalline dielectric film
  • Pyrochlore nanocrystalline dielectric film with ultrahigh energy storage performance and preparation method of the pyrochlore nanocrystalline dielectric film
  • Pyrochlore nanocrystalline dielectric film with ultrahigh energy storage performance and preparation method of the pyrochlore nanocrystalline dielectric film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Samples annealed at 550°C

[0031] Step 1: Prepare the solution

[0032] Use ethylene glycol methyl ether (2-MOE) as solvent. Lead acetate (Pb(CH 3 COO) 2 ·3H 2 O), calcium nitrate (Ca(NO 3 ) 2 4H 2 O) and zirconium n-propoxide (Zr(OCH 2 CH 2 CH 3 ) 4 ) as the solute, according to the atomic ratio of Pb:Ca:Zr 0.88:0.12:1, take lead acetate, calcium nitrate and zirconium n-propoxide. Add ethylene glycol methyl ether to lead acetate and calcium nitrate at a concentration of 0.2M, distill at 120°C for 2 hours, then cool to room temperature, add zirconium n-propoxide, stir at room temperature for 2 hours, and finally add ethyl Glycol methyl ether supplements the solvent loss caused by the distillation process, so that the solution concentration reaches 0.2M, and a light yellow transparent solution is obtained;

[0033] Step 2: Preparation of film material

[0034] (1) Using Pt(111) / Ti / SiO 2 / Si substrate. Spin-coat the solution prepared in step 1 onto the sub...

Embodiment 2

[0039] Samples annealed at 575°C

[0040] Step 1: Prepare the solution

[0041] Use ethylene glycol methyl ether (2-MOE) as solvent. Lead acetate (Pb(CH 3 COO) 2 ·3H 2 O), calcium nitrate (Ca(NO 3 ) 2 4H 2 O) and zirconium n-propoxide (Zr(OCH 2 CH 2 CH 3 ) 4 ) as the solute, according to the atomic ratio of Pb:Ca:Zr 0.88:0.12:1, take lead acetate, calcium nitrate and zirconium n-propoxide. Add ethylene glycol methyl ether to lead acetate and calcium nitrate at a concentration of 0.2M, distill at 120°C for 2 hours, then cool to room temperature, add zirconium n-propoxide, stir at room temperature for 2 hours, and finally add ethyl Glycol methyl ether supplements the solvent loss caused by the distillation process, so that the solution concentration reaches 0.2M, and a light yellow transparent solution is obtained;

[0042] Step 2: Preparation of film material

[0043] (1) Using Pt(111) / Ti / SiO 2 / Si substrate. Spin-coat the solution prepared in step 1 onto the sub...

Embodiment 3

[0048] Samples annealed at 525°C

[0049] Step 1: Prepare the solution

[0050] Use ethylene glycol methyl ether (2-MOE) as solvent. Lead acetate (Pb(CH 3 COO) 2 ·3H 2 O), calcium nitrate (Ca(NO 3 ) 2 4H 2 O) and zirconium n-propoxide (Zr(OCH 2 CH 2 CH 3 ) 4 ) as the solute, according to the atomic ratio of Pb:Ca:Zr 0.88:0.12:1, take lead acetate, calcium nitrate and zirconium n-propoxide. Add ethylene glycol methyl ether to lead acetate and calcium nitrate at a concentration of 0.2M, distill at 120°C for 2 hours, then cool to room temperature, add zirconium n-propoxide, stir at room temperature for 2 hours, and finally add ethyl Glycol methyl ether supplements the solvent loss caused by the distillation process, so that the solution concentration reaches 0.2M, and a light yellow transparent solution is obtained;

[0051] Step 2: Preparation of film material

[0052] (1) Using Pt(111) / Ti / SiO 2 / Si substrate. Spin-coat the solution prepared in step 1 onto the sub...

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Abstract

The invention provides a pyrochlore nanocrystalline dielectric film with ultrahigh energy storage performance and a preparation method of the pyrochlore nanocrystalline dielectric film, wherein the pyrochlore nanocrystalline dielectric film includes following requirements: (Pb<1-x>Ca<x>)ZrO<3>, x = 0.10-0.14; the pyrochlore nanocrystalline dielectric film is composed of pyrochlore phase nanocrystalline grains. The film material has ultrahigh energy storage performance: the electric field breakdown strength is 5MV / cm, the energy storage density is 91.3 J / cm3, and the energy storage efficiency is 85.3%. The preparation method of the material comprises the following steps: firstly, preparing a precursor solution according to the proportion of chemical components, then placing the obtained solution on a substrate material for spin coating to form a film, then drying the film, repeating the process for several times to reach the required thickness, and finally annealing the material in a rapid heating furnace to obtain the calcium-doped lead zirconate film material. As a dielectric material, the film material has a wide application prospect in energy storage devices such as ultra-high-speed pulse power devices and film capacitors.

Description

technical field [0001] The invention belongs to the technical field of functional ceramic materials, and in particular relates to a ceramic film material with high energy storage density and charge-discharge performance and a preparation method thereof. Background technique [0002] Dielectric energy storage capacitors have the advantages of fast charge and discharge speed, anti-cycle aging, suitable for extreme environments such as high temperature and high pressure, and stable performance, and have attracted people's attention in the field of energy storage. At present, the development trend of new technologies is to improve the energy storage characteristics of dielectric materials as much as possible, so as to realize the lightweight and miniaturization of equipment and meet the higher requirements of special purposes. The key to improving the energy storage characteristics of energy storage capacitors is to develop dielectric materials with high energy storage density. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G25/00H01G4/12
CPCC01G25/00H01G4/1236C01P2002/72C01P2004/03C01P2004/04C01P2004/01Y02P20/10
Inventor 王占杰李异卓
Owner SHENYANG POLYTECHNIC UNIV
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