Field-effect transistor, display element, image display device, and system

Abstract

A field-effect transistor includes a semiconductor layer formed of an n-type metal oxide semiconductor, wherein the n-type metal oxide semiconductor includes indium oxide, wherein the indium oxide isn-type doped through introduction of one or more kinds of cations as dopants, and wherein the n-type metal oxide semiconductor has a peak detected at an angle corresponding to a (222) plane of indiumoxide having a bixbite structure in an X-ray diffraction method using a two-dimensional detector.

Description

technical field [0001] The present disclosure relates to field effect transistors, display elements, image display devices and systems. Background technique [0002] Liquid crystal displays (LCDs), organic electroluminescence (EL) displays (OLEDs), and flat panel displays (FPDs) such as electronic paper are driven by drive circuits that include thin films using amorphous silicon or polysilicon in their active layers Transistors (TFTs). The FPD is further required to be larger in size, higher in definition, and faster in driving performance. This trend requires TFTs to have higher carrier mobility (and more stable performance. [0003] However, there are both advantages and disadvantages in TFTs using active layers including amorphous silicon (a-Si) or polysilicon, especially low temperature polysilicon (LTPS). It is difficult for TFT to satisfy all demands at the same time. [0004] K.Nomura, 5 others, "Room-temperature fabrication of transparent flexible thin-film trans...

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Problems solved by technology

However, this publication does not address the conditions for efficient n-type doping or the conditions for obtaining high mobility

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