GaN-based waveguide device based on porous lower cladding and preparation method and application thereof

Abstract

The invention discloses a GaN-based waveguide device based on a porous lower cladding and a preparation method and application thereof. The GaN-based waveguide device comprises a substrate; a buffer layer disposed on the substrate; a current spreading layer disposed on the buffer layer; the porous lower cladding layer arranged on the current spreading layer and used for reducing the leakage of thelight field to the direction of the substrate; and a waveguide core layer arranged on the porous lower cladding layer. Different from most of existing GaN-based waveguides, the porous lower claddingis adopted, due to the fact that the porous material can provide the refractive index difference larger than that of a single-layer AlGaN lower cladding, the structure has a better limiting effect ona transmitted light field mode, and therefore leakage of a light field in the direction of a substrate is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated optoelectronics, and in particular relates to a GaN-based waveguide device based on a porous lower cladding layer and its preparation method and application. Background technique [0002] Because optoelectronic integration is not affected by the parasitic effects of electrical interconnection, it can better and quickly process information, and has become a research hotspot in recent years. With the continuous development of biochemical sensing, nonlinear optics and other fields, optoelectronics Integrated technology is gradually expanding from the infrared band of communication to the visible and ultraviolet bands. As a wide-bandgap semiconductor material, GaN is widely used in the preparation of light-emitting and detector devices, among which blue LEDs and lasers have been commercialized; at the same time, GaN materials can pass through most short-waves, reducing the loss of optical signa...

AI Technical Summary

Problems solved by technology

For the former, since the refractive index of sapphire is 1.7, the transmission mode is well confined in GaN. However, there are often a large number of defects at the interface between GaN and sapphire heteroepitaxy, resulting in an inevitable increase in optical absorption. The transmission loss of the waveguide

For the second structure, the refractive index difference between AlGaN and GaN is small, and the optical field confinement effect is low, causing the mode to leak to the substrate, and the high Al composition will also increase the difficulty of epitaxy

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